Photoluminescence of Mg‐doped GaAs grown by molecular beam epitaxy using Mg3As2as a Mg source: A comparison with Mg+ion implantation

1986 ◽  
Vol 49 (18) ◽  
pp. 1184-1186 ◽  
Author(s):  
Yunosuke Makita ◽  
Yoshinori Takeuchi ◽  
Nobukazu Ohnishi ◽  
Toshio Nomura ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Mg Doped

scholarly journals Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

2016 ◽  
Vol 119 (24) ◽  
pp. 245702 ◽  
Author(s):  
Akira Uedono ◽  
Marco Malinverni ◽  
Denis Martin ◽  
Hironori Okumura ◽  
Shoji Ishibashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Mg Doped

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

2004 ◽  
Vol 84 (6) ◽  
pp. 897-899 ◽  
Author(s):  
R. Cuscó ◽  
L. Artús ◽  
D. Pastor ◽  
F. B. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped

InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

1999 ◽  
Vol 176 (1) ◽  
pp. 273-277 ◽  
Author(s):  
S. Nakamura ◽  
A. Kikuchi ◽  
K. Kusakabe ◽  
D. Sugihara ◽  
Y. Toyoura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Control Method ◽  
Mg Doped

Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (3) ◽  
pp. 035201 ◽  
Author(s):  
Giuliana Impellizzeri ◽  
Lucia Romano ◽  
Lorenzo Bosco ◽  
Corrado Spinella ◽  
Maria Grazia Grimaldi
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam

Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy

2008 ◽  
Vol 51 (10) ◽  
pp. 1001-1015 ◽  
Author(s):  
A. V. Voitsekhovskii ◽  
D. V. Grigor’ev ◽  
N. Kh. Talipov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam

scholarly journals Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

2016 ◽  
Vol 108 (7) ◽  
pp. 072102 ◽  
Author(s):  
Hironori Okumura ◽  
Denis Martin ◽  
Marco Malinverni ◽  
Nicolas Grandjean
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mg Doped

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Raman Scattering and Photoluminescence of Mg Doped GaN Films Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
G. Popovici ◽  
G. Y. Xu ◽  
A. Botchkarev ◽  
W. Kim ◽  
H. Tang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Longitudinal Optical ◽  
Raman Shift ◽  
Longitudinal Optical Phonon ◽  
Photoluminescence Peak ◽  
Mg Doped

ABSTRACTRaman, photoluminescence, and Hall measurements are reported for Mg doped GaN films grown by molecular beam epitaxy. The compressive and tensile stress determined by the Raman shift of the phonon lines is due to the growth conditions rather than the presence of Mg in the film. The photoluminescence peak of near band-to-band transitions is also shifted to larger (smaller) energies by the compressive (tensile) stress. The study of the longitudinal optical phonon of the Ai branch shows that its Raman line shape is affected not only by phonon-plasmon interactions but by the crystalline quality of the film, as well.

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