Intrinsic N-Type Modulation Doping in Inp-Based Heterostructures

1996 ◽  
Vol 421 ◽  
Author(s):  
W.M. Chen ◽  
I.A. Buyanova ◽  
A. Buyanov ◽  
W.G. Bi ◽  
C.W. Tu
Keyword(s):  
Electron Transfer ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Electron Gas ◽  
Shallow Donor ◽  
Modulation Doping ◽  
Gas Source ◽  
Shubnikov De Haas Oscillations ◽  
Lt Inp

AbstractWe propose and demonstrate a new doping approach, i.e. intrinsic doping, for n-type modulation doping in InP-based heterostructures. Instead of the conventional method of n-type doping by shallow donor impurities, grown-in intrinsic defects are utilized to provide the required doping without external doping sources. The success of this approach is clearly demonstrated by our results from InGaAs/InP heterostructures, where the required n-type doping in the InP barriers is provided by Pin antisites, preferably introduced during off-stoichiometric growth of InP at low temperatures (LT-InP) by gas source molecular beam epitaxy. A twodimensional electron gas (2DEG) is shown to be formed near the InGaAs/InP heterointerface as a result of electron transfer from the LT-InP to the InGaAs active layer, from studies of Shubnikov-de Haas oscillations and photoluminescence. The concentration of the 2DEG is determined to be as high as 1.15×1012 cm−2, where two subbands of the 2DEG are readily occupied.

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Low-Temperature Growth and Characterization of InP Grown by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 241 ◽  
Author(s):  
B. W. Liang ◽  
Y. He ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Ex Situ ◽  
Experimental Result ◽  
High Concentration ◽  
Gas Source ◽  
Type Property ◽  
Concentration Changes ◽  
Lt Inp

ABSTRACTLow-temperature (LT) growth of InP by gas-source molecular-beam epitaxy has been studied. Contrary to GaAs, InP grown at low temperature (from 200°C to 410°C) shows ntype, low-resistivity properties. The electron concentration changes dramatically with growth temperature. A model of P antisite defects formed during LT growth was used to explain this experimental result. Ex-situ annealing can increase the resistivity, but only by a factor of about 6. Heavily Be-doped LT InP also shows n-type property. We believe this is the first report of an extremely high concentration of donors formed in LT InP and n-type doping by Be in III–V compounds.

scholarly journals High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

2000 ◽  
Vol 5 (S1) ◽  
pp. 459-466
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Ammonia Gas ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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