Detection and characterization of stacking faults by light beam induced current mapping and scanning infrared microscopy in silicon

1998 ◽  
Vol 3 (2) ◽  
pp. 123-126 ◽  
Author(s):  
C. Vève-Fossati ◽  
S. Martinuzzi
Keyword(s):  
Light Beam ◽  
Stacking Faults ◽  
Induced Current ◽  
Infrared Microscopy

Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 363-366 ◽  
Author(s):  
Y. Wang ◽  
L. Chen ◽  
M.K. Mikhov ◽  
G. Samson ◽  
B.J. Skromme
Keyword(s):  
Spectroscopic Data ◽  
Radiative Recombination ◽  
Stacking Faults ◽  
Induced Current ◽  
Forward Voltage ◽  
Poisson Equations ◽  
Forward Current ◽  
Self Consistent ◽  
Electron Beam Induced Current

Formation of I1 Shockley stacking faults by recombination-enhanced defect glide in 4HSiC p-i-n diodes subject to high forward current stress is studied in diodes on both c-oriented and aoriented substrates. The forward voltage increases during stressing for both orientations, accompanied by nucleation and expansion of faults visible in electroluminescence (EL) imaging. Low temperature photoluminescence (PL) measurements on degraded diodes of both orientations reveal the same set of exciton peaks, confirming that the electronic structure of the faults is the same in both cases. The spectroscopic data are compared to self-consistent solutions of the Schrödinger and Poisson equations including polarization charge. Dislocations nucleating the faults are bright in EL images but dark in electron beam-induced current (EBIC) imaging, confirming that they are sites of enhanced radiative recombination.

LIGHT BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL ACTIVITY OF STACKING FAULTS IN CZ SILICON

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-169-C6-169
Author(s):  
A. CASTALDINI ◽  
A. CAVALLINI ◽  
A. POGGI ◽  
E. SUSI
Keyword(s):  
Electrical Activity ◽  
Light Beam ◽  
Stacking Faults ◽  
Induced Current

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

2016 ◽  
Vol 213 (7) ◽  
pp. 1728-1737 ◽  
Author(s):  
Orman Gref ◽  
Ana-Maria Teodoreanu ◽  
Rainer Leihkauf ◽  
Heiko Lohrke ◽  
Martin Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Light Beam ◽  
Polycrystalline Silicon ◽  
Diffusion Length ◽  
Silicon Wafers ◽  
Induced Current ◽  
Silicon Thin Films

scholarly journals Characterization of local Al-contacts by light beam induced current measurements and their verification by 2D simulation using flexPDE

2016 ◽  
Vol 213 (5) ◽  
pp. 1317-1323 ◽  
Author(s):  
Renate Horbelt ◽  
Gabriel Micard ◽  
Philipp Keller ◽  
Giso Hahn ◽  
Reinhart Job ◽  
...  
Keyword(s):  
Light Beam ◽  
Induced Current ◽  
2D Simulation
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