Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

2016 ◽  
Vol 213 (7) ◽  
pp. 1728-1737 ◽  
Author(s):  
Orman Gref ◽  
Ana-Maria Teodoreanu ◽  
Rainer Leihkauf ◽  
Heiko Lohrke ◽  
Martin Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Light Beam ◽  
Polycrystalline Silicon ◽  
Diffusion Length ◽  
Silicon Wafers ◽  
Induced Current ◽  
Silicon Thin Films

Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

2008 ◽  
Vol 47 (1) ◽  
pp. 54-58 ◽  
Author(s):  
Kuninori Kitahara ◽  
Hiroya Ogasawara ◽  
Junji Kambara ◽  
Mitsunori Kobata ◽  
Yasutaka Ohashi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Chemical Etching ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Optical characterization of polycrystalline silicon thin films

1996 ◽  
Author(s):  
William A. McGahan ◽  
Blaine R. Spady ◽  
Blaine D. Johs ◽  
Olivier Laparra
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Optical Characterization ◽  
Silicon Thin Films

Grain Boundary Characterization in Polysilicon by Light Beam Induced Current Topography and Image Processing

1987 ◽  
Vol 106 ◽  
Author(s):  
K. Masri ◽  
J. P. Boyeaux ◽  
S. N. Kumar ◽  
L. Mayet ◽  
A. Laugier
Keyword(s):  
Grain Boundary ◽  
Light Beam ◽  
High Performance ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
A Value ◽  
Recombination Velocity ◽  
P Type

ABSTRACTA high performance light-beam-induced-current (LBIC) analyser has been used to determine the recombination velocity at the grain boundary (S) and the minority-carrier diffusion length (L). For this purpose a Schottky diode (Cr/Si) was fabricated using a p-type silicon bicrystal (1Ω cm, Σ13 grain boundary). The contacts were obtained by a “cold” technology. The diffusion length, determined by the method proposed by Ioannou, was subsequently fitted into the model proposed by Marek to evaluate the recombination velocity by the curve-fitting of the experimental and theoretical photocurrent profiles. A value of S = 2.104 cm/s was thus obtained. The influence of the thin oxide layer at the Cr/Si interface is also discussed.

Diffusion of Arsenic and Phosphorus in Laserprocessed-Polycrystalline-Silicon-Thin-Films

1981 ◽  
Vol 5 ◽  
Author(s):  
H. Baumgart ◽  
H. J. Leamy ◽  
L. E. Trimble ◽  
C. J. Doherty ◽  
G. K. Celler
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Diffusion Length ◽  
Grain Boundary Diffusion ◽  
Silicon Thin Films ◽  
P Diffusion ◽  
Ion Laser ◽  
Si Films

ABSTRACTGrain boundary diffusion of arsenic and phosphorus in laser processed polycrystalline Si films has been investigated. Mesa diodes were fabricated in LPCVD Si thin films on SiO2 and subsequently recrystallized by cw Ar ion laser processing to form large grain material. The diffusion length of enhanced As and P diffusion along grain boundaries intersecting the p-n junction has been measured by the EBIC technique. Quantitative experimentation allowed determination of the grain boundary diffusion coefficients of As and P in the temperature range from 900°C to 1250°C.

Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

1993 ◽  
Vol 62 (25) ◽  
pp. 3285-3287 ◽  
Author(s):  
N. H. Nickel ◽  
N. M. Johnson ◽  
W. B. Jackson
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Polycrystalline Silicon ◽  
Hydrogen Passivation ◽  
Silicon Thin Films

Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

2014 ◽  
Vol 32 (6) ◽  
pp. 061509 ◽  
Author(s):  
Avishek Kumar ◽  
Felix Law ◽  
Goutam K. Dalapati ◽  
Gomathy S. Subramanian ◽  
Per I. Widenborg ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Synthesis And Characterization ◽  
Silicon Thin Films

Characterization of Polycrystalline Silicon Thin Films by Photoluminescence

1990 ◽  
Vol 182 ◽  
Author(s):  
R. Pandya ◽  
K. Shahzad
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Qualitative Explanation ◽  
Silicon Thin Films ◽  
Pl Spectrum ◽  
Recombination Velocity ◽  
Quartz Substrates

AbstractPhotoluminescence (PL) measurements have been carried out in hydrogenated and as deposited polycrystalline silicon thin films deposited on quartz substrates. Behavior of the PL spectrum as a function of temperature and intensity in the hydrogenated samples is reported. A mechanism that provides a qualitative explanation for the observed PL results is described. In the unhydrogenated sample the signal was much weaker and we were unable to observe any signals over an appreciable range of intensity and temperatures. The cause for much lower signals in the unhydrogenated sample is most likely due to higher surface recombination velocity.

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