LIGHT BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL ACTIVITY OF STACKING FAULTS IN CZ SILICON

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-169-C6-169
Author(s):  
A. CASTALDINI ◽  
A. CAVALLINI ◽  
A. POGGI ◽  
E. SUSI
Keyword(s):  
Electrical Activity ◽  
Light Beam ◽  
Stacking Faults ◽  
Induced Current

EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 627-630
Author(s):  
Jinggang Lu ◽  
George A. Rozgonyi ◽  
James Rand ◽  
Ralf Jonczyk
Keyword(s):  
Electron Beam ◽  
Electrical Activity ◽  
High Spatial Resolution ◽  
Stacking Faults ◽  
Interstitial Oxygen ◽  
Induced Current ◽  
Contrast Variation ◽  
Lifetime Measurements ◽  
Recombination Lifetime ◽  
Electron Beam Induced Current

The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. Following a three hour 1060 0C annealing the interstitial oxygen concentration decreased from 14 to 4.5 x 1017 cm-3, during which time a high density of SFs were generated in the center of individual large grains. Subsequent EBIC contrast variation within individual large grains was correlated with the local SF density revealed by preferential etching. In addition, a more quantitative intra-grain lifetime was obtained from high spatial resolution PCD measurements. It was found that an SF density of 1 to 2 x 106 cm-2 produces a lifetime limitation in sheet silicon which corresponds to a recombination lifetime of ~2 µs.

Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 367-370 ◽  
Author(s):  
S.I. Maximenko ◽  
P. Pirouz ◽  
Tangali S. Sudarshan
Keyword(s):  
Electron Beam ◽  
Electrical Activity ◽  
Quantum Wells ◽  
Radiative Recombination ◽  
Stacking Faults ◽  
Nonradiative Recombination ◽  
Induced Current ◽  
Pin Diodes ◽  
Partial Dislocations ◽  
Electron Beam Induced Current

In this paper the electrical activity of stacking faults and that of their bounding partial dislocations in degraded PiN diodes has been investigated by the technique of electron beam induced current (EBIC). The recombination behavior of C- and Si-core dislocations is discussed. It is proposed that nonradiative recombination significantly exceeds radiative recombination on both the C- and Si-core partial dislocations. At the same time, predominantly radiative recombination takes place in the faulted planes that presumably act as quantum wells.

scholarly journals Analysis of solar cell cross sections with micro-light beam induced current (µLBIC)

2014 ◽  
Vol 131 ◽  
pp. 124-128 ◽  
Author(s):  
Matthias Breitwieser ◽  
Friedemann D. Heinz ◽  
Andreas Büchler ◽  
Martin Kasemann ◽  
Jonas Schön ◽  
...  
Keyword(s):  
Solar Cell ◽  
Light Beam ◽  
Cross Sections ◽  
Induced Current

Spatially Resolved Defect Analysis in Cz-Silicon after Copper-Nickel Co-Precipitation by Virtue of Light-Beam-Induced Current Measurements

2009 ◽  
Vol 156-158 ◽  
pp. 431-436
Author(s):  
P. Saring ◽  
C. Rudolf ◽  
L. Stolze ◽  
A. Falkenberg ◽  
Michael Seibt
Keyword(s):  
Light Beam ◽  
Induced Current ◽  
Copper Precipitation ◽  
Copper Nickel ◽  
Spatially Resolved ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
The One ◽  
Co Precipitation ◽  
Wafer Direct Bonding

We report on a light-beam-induced current (LBIC)-analysis of metal silicide defects arising from co-precipitation of copper and nickel in Cz-silicon-bicrystals produced by wafer direct bonding. Large colonies of silicide precipitates in the one wafer emerging from undisturbed growth from few nucleation sites were observed in different orientations with respect to the surface which correspond to Si {110} planes. From this, the colonies formed during copper-nickel co-precipitation reveal the same attributes as those colonies typical for copper precipitation in the absence of nickel. Oxygen related defects associated with a higher defect distribution in the other wafer were characterized by means of high resolution Transmission Electron Microscopy (TEM) and their temperature dependent LBIC signal.

Impurity Removing at Dislocations in Float Zone Silicon by Aluminium-Silicon Alloying

1997 ◽  
Vol 469 ◽  
Author(s):  
I. Perichaud ◽  
S. Martinuzzi
Keyword(s):  
Electrical Activity ◽  
Front Surface ◽  
Mapping Technique ◽  
Induced Current ◽  
Standard Samples ◽  
Aluminium Layer ◽  
X Ray ◽  
Float Zone ◽  
Dislocation Arrays ◽  
Before And After

ABSTRACTAluminium-silicon alloying is applied to dislocation-containing FZ silicon samples in order to verify if this external gettering technique is able to remove impurities trapped by these defects. Samples were scratched (front surface), bent and annealed at 750°C for 6h in order to create dislocation arrays. Standard samples and also nickel contaminated samples were investigated by light beam induced current (LBIC) mapping technique before and after alloying at 900°C for 4h with a 1 μm thick aluminium layer deposited on the backside. The LBIC technique detects the features of the dislocation array in agreement with X ray topographs. In the standard samples, the contrast is relatedto an inadvertent contamination of the samples and disappears after gettering. In the contaminated samples, dislocation contrast is higher, the aluminium treatment attenuates strongly the dislocations electrical activity but not so neatly as for the standard samples. This result is explained by the possible microprecipitation of nickel at dislocations.

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