An improved method of light‐beam‐induced current characterization of grain boundaries

1986 ◽  
Vol 59 (7) ◽  
pp. 2361-2363 ◽  
Author(s):  
W. D. Sawyer
Keyword(s):  
Grain Boundaries ◽  
Light Beam ◽  
Induced Current ◽  
Improved Method

Gettering of Dissolved and Segregated Impurities in Multicrystalline Silicon Wafers

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Stemmer ◽  
I. Perichaud ◽  
S. MartiNuzzi
Keyword(s):  
Grain Boundaries ◽  
Light Beam ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Extended Defects ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
Cast Ingot ◽  
Crystallographic Defects ◽  
Homogeneous Regions

ABSTRACTPhosphorus gettering by diffusion from a POCl3 source was applied to matched wafers cut out of the same region of a cast ingot. Light Beam Induced Current mappings with wavelengths in the range between 840 and 980 nm lead to follow the variation of minority carrier diffusion length after gettering at 900°C for 120 and 240 mn, especially near extended crystallographic defects like dislocations and grain boundaries.The mappings show that after the gettering treatments, the local values of L increase due to the reduction of the recombination strength of extended defects and to the improvement of the homogeneous regions of the grains.As SIMS analyses indicate that Fe, Cu and Ni atoms are gettered, it is reasonable to assume that these impurities were initially dissolved in the grains and also segregated at the extended defects.

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

2016 ◽  
Vol 213 (7) ◽  
pp. 1728-1737 ◽  
Author(s):  
Orman Gref ◽  
Ana-Maria Teodoreanu ◽  
Rainer Leihkauf ◽  
Heiko Lohrke ◽  
Martin Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Light Beam ◽  
Polycrystalline Silicon ◽  
Diffusion Length ◽  
Silicon Wafers ◽  
Induced Current ◽  
Silicon Thin Films
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