scholarly journals A review of surface roughness impact on dielectric film properties

2021 ◽  
Author(s):  
Guanghui Song ◽  
Yaojin Wang ◽  
Daniel Q. Tan
Keyword(s):  
Surface Roughness ◽  
Dielectric Film ◽  
Film Properties

Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

2019 ◽  
Vol 28 (6) ◽  
pp. 493-502
Author(s):  
Hang Cheong Sio ◽  
Sieu Pheng Phang ◽  
Hieu T. Nguyen ◽  
Ziv Hameiri ◽  
Daniel Macdonald
Keyword(s):  
Dielectric Film ◽  
Multicrystalline Silicon ◽  
Film Properties ◽  
The Impact

scholarly journals Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2118
Author(s):  
Hei Wong ◽  
Jieqiong Zhang ◽  
Hiroshi Iwai ◽  
Kuniyuki Kakushima
Keyword(s):  
Surface Roughness ◽  
Integrated Circuit ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Critical Issue ◽  
Roughness Effects ◽  
Integrated Circuit Manufacturing ◽  
Interface Reactions ◽  
High K ◽  
And Performance

As CMOS devices are scaled down to a nanoscale range, characteristic variability has become a critical issue for yield and performance control of gigascale integrated circuit manufacturing. Nanoscale in size, few monolayers thick, and less thermally stable high-k interfaces all together cause more significant surface roughness-induced local electric field fluctuation and thus leads to a large device characteristic variability. This paper presents a comprehensive study and detailed discussion on the gate leakage variabilities of nanoscale devices corresponding to the surface roughness effects. By taking the W/La2O3/Si structure as an example, capacitance and leakage current variabilities were found to increase pronouncedly for samples even with a very low-temperature thermal annealing at 300 °C. These results can be explained consistently with the increase in surface roughness as a result of local oxidation at the La2O3/Si interface and the interface reactions at the W/La2O3 interface. The surface roughness effects are expected to be severe in future generations’ devices with even thinner gate dielectric film and smaller size of the devices.

scholarly journals Influence of Carbon Quantum Dots on the Electrical Performance of Triboelectric Generators

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1025 ◽  
Author(s):  
Vasiliki Prifti ◽  
Antigoni Siaraka ◽  
Aikaterini Giannouli ◽  
Apostolos Segkos ◽  
Achilleas Bardakas ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Quantum Dots ◽  
Film Thickness ◽  
Potential Application ◽  
Dielectric Film ◽  
Sliding Mode ◽  
Flexible Substrate ◽  
Carbon Quantum Dots ◽  
Electrical Performance ◽  
Device Performance

In this work we investigate the triboelectric properties of Carbon Quantum Dots (CQDs) films for potential application in triboelectric generators. CQDs were deposited on silicon wafers, using spin on techniques. Device performance was estimated in sliding mode experiments, where the CQDs-surface was sliding on top of a flexible substrate. The triboelectric signal as well as the charging of capacitors, after signal rectification, was monitored as a function of time. Our results indicate that surface roughness plays a very important role in the triboelectric signal and could compensate opposite trends due to other parameters, such as the dielectric film thickness.

Open Resonator Technique for Measurement of Thin Dielectric Film Properties on Optically Dense Substrates

2000 ◽  
Vol 631 ◽  
Author(s):  
Sergey Dudorov ◽  
Dmitri Lioubtchenko ◽  
Juha Mallat ◽  
Jussi Tuovinen ◽  
Antti V. Räisänen
Keyword(s):  
Dielectric Film ◽  
Open Resonator ◽  
Dielectric Substrate ◽  
Dielectric Films ◽  
Film Properties ◽  
Thin Dielectric Film ◽  
Direct Measurements ◽  
Device Applications ◽  
Thin Dielectric Films ◽  
Good Agreement

ABSTRACTThin dielectric films on the dielectric substrate are widely employed in millimeter and submillimeter wave device applications, so the problem of precise measurement of their properties is important. One of the most accurate technique for measurement of dielectric properties is the open resonator technique.In this work we propose the method for measurements of thin dielectric film properties on the dielectric substrate using the open semispherical resonator. A good agreement (within 1 %) was obtained in refractive index data between results obtained with direct measurements and with proposed method for thin layer of SI GaAs on a sapphire substrate.

A Simple Model for Scuffing Risk Evaluation of Point Contact Under Mixed Lubrication

2017 ◽  
Vol 140 (3) ◽  
Author(s):  
Zhijian Wang ◽  
Qingtao Yu ◽  
Xuejin Shen ◽  
Xiaoyang Chen
Keyword(s):  
Surface Roughness ◽  
Point Contact ◽  
High Viscosity ◽  
Mixed Lubrication ◽  
Operating Conditions ◽  
Large Radius ◽  
Film Properties ◽  
Boundary Film ◽  
Boundary Films ◽  
High Viscosity Oil

This paper developed a point-contact mixed lubrication (ML) model, incorporating thermal effect, the asperity elasto-plastic deformation and the boundary film properties, to evaluate the relative severity of contact condition. Then, based on the integrity of boundary films and the sharp increase of the friction coefficient, the possibility of the occurrence of scuffing was evaluated. The model was verified with published experimental data. A systematic parametric analysis was made to investigate the influences of surface roughness, contact geometry, and the lubricant properties on contact performance. The results suggest that low surface roughness and high-quality boundary film can effectively improve the scuffing resistance under current operating conditions, while high-viscosity oil and large-radius curvature are not as much effective especially when the components work under high-sliding and high–temperature conditions.

Plasma Activated Chemical Vapor Deposition of Polythiophene Thin Films

1992 ◽  
Vol 247 ◽  
Author(s):  
J. D. Targove ◽  
P. D. Haaland ◽  
C. A. Kutsche
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reactive Ion Etching ◽  
Chemical Vapor ◽  
Film Properties ◽  
Ion Etching ◽  
Plasma Technique ◽  
Argon Stream

ABSTRACTPolythiophene thin films have been deposited by a novel plasma technique which avoids the disadvantages of conventional plasma-based processes. In particular, the thiophene precursor is injected into an activated argon stream rather than into a plasma. The films produced are dense and uniform, with surface roughness of less than 1 nm. Other film properties are comparable to films deposited by more conventional methods. These films have been processed by reactive ion etching to produce micron-scale features.

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