Plasma Activated Chemical Vapor Deposition of Polythiophene Thin Films

1992 ◽  
Vol 247 ◽  
Author(s):  
J. D. Targove ◽  
P. D. Haaland ◽  
C. A. Kutsche
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reactive Ion Etching ◽  
Chemical Vapor ◽  
Film Properties ◽  
Ion Etching ◽  
Plasma Technique ◽  
Argon Stream

ABSTRACTPolythiophene thin films have been deposited by a novel plasma technique which avoids the disadvantages of conventional plasma-based processes. In particular, the thiophene precursor is injected into an activated argon stream rather than into a plasma. The films produced are dense and uniform, with surface roughness of less than 1 nm. Other film properties are comparable to films deposited by more conventional methods. These films have been processed by reactive ion etching to produce micron-scale features.

Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

2002 ◽  
Vol 743 ◽  
Author(s):  
Marie Wintrebert-Fouquet ◽  
K. Scott ◽  
A. Butcher ◽  
Simon K H Lam
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Reactive Ion Etching ◽  
Film Surface ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Before And After

ABSTRACTWe present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive sputtering. Commercial GaN samples were also examined. Optical and electrical characteristics of the films are reported before and after removing 100 to 200 nm of the film surface by RIE. We have previously shown that the GaN films, although polycrystalline after growth, may be re-crystallized below the growth temperature. Removal of the surface oxide has been found to be imperative since a polycrystalline residue remains on the surface after re-crystallization.

Metalorganic chemical vapor deposition of Er2O3 thin films: Correlation between growth process and film properties

2009 ◽  
Vol 517 (8) ◽  
pp. 2606-2610 ◽  
Author(s):  
Maria M. Giangregorio ◽  
Maria Losurdo ◽  
Alberto Sacchetti ◽  
Pio Capezzuto ◽  
Giovanni Bruno
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Process ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Properties ◽  
Metalorganic Chemical

Comparison of Copper CVD Using Cu(FOD)2 and Cu(HFAC)2 Reduction

1999 ◽  
Vol 564 ◽  
Author(s):  
J. S. Boey ◽  
G. L. Griffin ◽  
A. W. Maverick ◽  
H. Fan
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Order ◽  
Cluster Formation ◽  
Chemical Vapor ◽  
Significant Cluster ◽  
Film Properties ◽  
Film Nucleation

AbstractWe have measured the growth rate and film properties for the chemical vapor deposition of copper thin films using H2 reduction of Cu(fod)2 [H(fod) = 6,6,7,7,8,8,8-heptafluoro-2,2- dimethyl-3,5-octanedione]. The results are directly compared to deposition using Cu(hfac)2 [H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione]. Higher growth rates are obtained using Cu(fod)2, in part because of differences in reaction order between the two compounds. However, both compounds exhibit significant cluster formation during film nucleation, which leads to residual porosity and film resistivities above 2 µΩ-cm.

Lou Temperature Growth of Superconducting Ybaacu,07‐X Thin Films by Metalorganic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
Keiichi Kanehori ◽  
Nobuyuki Sugii ◽  
Katsuki Miyauchi
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Critical Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Properties ◽  
Temperature Growth ◽  
Metalorganic Chemical

AbstractThin YBa2Cu307‐xfilms were grown by thermal and plasma enhanced MOCVD, and the effects of growth teiperature on the film properties were studied. The crystal Iinity of the fills deteriorated with growth teiperature, so superconductity decreased with growth teiperature. Thin fills grown by therial MOCVD at 600°C, 650°C, 700°C and 750°C had zero‐resistivity at 10K, 71K, 83K and 84K, respectively. The growth teiperature for superconducting fids is decreased by plasia enhancement. Thin films grown by plasma enhanced MOCVD at 515°C and 580 °C had zero‐resistivity at 60K and 85K. The critical current density of fills grown by plasia enhanced MOCVD at 580°C was 105A/cm2 at 77K.

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