Correlating overlay metrology precision to interlayer dielectric film properties

2008 ◽  
Author(s):  
Kris R. Paserba
Keyword(s):  
Dielectric Film ◽  
Film Properties ◽  
Interlayer Dielectric

Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

2019 ◽  
Vol 28 (6) ◽  
pp. 493-502
Author(s):  
Hang Cheong Sio ◽  
Sieu Pheng Phang ◽  
Hieu T. Nguyen ◽  
Ziv Hameiri ◽  
Daniel Macdonald
Keyword(s):  
Dielectric Film ◽  
Multicrystalline Silicon ◽  
Film Properties ◽  
The Impact

Nano-Structural Control of Molecular-Pore Stacked (MPS) SiOCH Films Using Plasma Copolymerization Reaction

2006 ◽  
Vol 949 ◽  
Author(s):  
Hironori Yamamoto ◽  
Fuminori Ito ◽  
Munehiro Tada ◽  
Tsuneo Takeuchi ◽  
Naoya Furutake ◽  
...  
Keyword(s):  
Structural Control ◽  
Dielectric Film ◽  
Membered Ring ◽  
Molecular Gas ◽  
Interlayer Dielectric ◽  
Ring Type ◽  
Plasma Copolymerization ◽  
Copolymerization Reaction

ABSTRACTA novel plasma co-polymerization technology, using flexibly-mixed molecular gas of 6-membered ring-type vinyl-siloxane and 8-member ring-type one, has been developed for new interlayer dielectric film.

Deposition and Characterization of PECVD SiOC Films by Using Bistrimethylsilylmethane (BTMSM) Precursor

2001 ◽  
Vol 714 ◽  
Author(s):  
Yoon-Hae Kim ◽  
Moo Sung Hwang ◽  
Young Lee ◽  
Hyeong Joon Kim
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Silicon Oxide ◽  
Hydrogen Plasma ◽  
Low Dielectric Constant ◽  
Film Properties ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Process Compatibility

ABSTRACTCarbon-containing silicon oxide (SiOC) is regarded as a potential low dielectric constant (low-κ) material for an interlayer dielectric (ILD) in next generation interconnection. In this study, we present the fundamental film properties and integration process compatibility of the low-κ SiOC film deposited by using bistrimethylsilylmethane (BTMSM) precursor. As more carbon was incorporated into film, both film density and dielectric constant decreased. The lowest κ-value, which we have obtained in this study, was 2.3 and the hardness of SiOC film was 1.1GPa as well as showing the thermal stability up to 500°C. In case of using conventional gases, organic components in SiOC film restricted etch rate. However, O2 addition could make it possible to obtaine a reasonable etch rate. The post-treatment of SiOC film in hydrogen plasma improved the resistance to O2 plasma in ashing process. The compatibility of SiOC film to the CMP process was also examined.

Open Resonator Technique for Measurement of Thin Dielectric Film Properties on Optically Dense Substrates

2000 ◽  
Vol 631 ◽  
Author(s):  
Sergey Dudorov ◽  
Dmitri Lioubtchenko ◽  
Juha Mallat ◽  
Jussi Tuovinen ◽  
Antti V. Räisänen
Keyword(s):  
Dielectric Film ◽  
Open Resonator ◽  
Dielectric Substrate ◽  
Dielectric Films ◽  
Film Properties ◽  
Thin Dielectric Film ◽  
Direct Measurements ◽  
Device Applications ◽  
Thin Dielectric Films ◽  
Good Agreement

ABSTRACTThin dielectric films on the dielectric substrate are widely employed in millimeter and submillimeter wave device applications, so the problem of precise measurement of their properties is important. One of the most accurate technique for measurement of dielectric properties is the open resonator technique.In this work we propose the method for measurements of thin dielectric film properties on the dielectric substrate using the open semispherical resonator. A good agreement (within 1 %) was obtained in refractive index data between results obtained with direct measurements and with proposed method for thin layer of SI GaAs on a sapphire substrate.

A Novel Photosensitive Porous Low-k Interlayer Dielectric Film

2003 ◽  
Author(s):  
Shin-Ichiro Kuroki ◽  
Toshiaki Hirota ◽  
Takamaro Kikkawa
Keyword(s):  
Dielectric Film ◽  
Interlayer Dielectric ◽  
Low K

Fluorinated SiO2 Films For Interlayer Dielectrics In Quarter-Micron Ulsi Multilevel Interconnections

1995 ◽  
Vol 381 ◽  
Author(s):  
Tetsuya Homma
Keyword(s):  
Residual Stress ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Dielectric Film ◽  
Film Formation ◽  
Pure Water ◽  
Film Deposition ◽  
Interlayer Dielectric ◽  
Interlayer Dielectrics ◽  
Lpd Technique

AbstractFluorinated SiO2 films for use as interlayer dielectrics in ULSI multilevel interconnections are investigated. The interlayer dielectric film properties and their formation techniques have to meet the following requirements: (1) a low dielectric constant, (2) a high planarization capability, (3) a high capability for narrow gap filling, and (4) a low deposition temperature for low residual stress. To satisfy these requirements, three technologies have been investigated. They are: (i) a fluorinated SiO2 (SiOF) film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotrialkoxysilane (FTAS) and pure water as gas sources, (ii) a room temperature liquid phase deposition (LPD) SiO2 film, and (iii) a fluorinated spin-on-glass (SOG) film by fluorotrialkoxysilane vapor treatment (FAST-SOG). The dielectric constant for SiO2 films can be reduced to 3.7 at 1 MHz by the RTCVD and LPD techniques. Although the FAST and RTCVD techniques cannot achieve full planarization, the LPD technique can achieve both global and local planarization because this technique has high capability for selective SiO2 film deposition. The RTCVD, FAST and LPD techniques have shown the possibility to reduce the film formation temperature to room temperature by catalytic reactions, resulting in low residual stress. Other properties of the RTCVD-SiOF, LPD-SiO2 and FAST-SOG films are good enough for the interlayer dielectric film application. The LPD-SiO2 film shows higher endurance properties to moisture than the RTCVD-SiOF and FAST-SOG films.

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