Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

2019 ◽  
Vol 28 (6) ◽  
pp. 493-502
Author(s):  
Hang Cheong Sio ◽  
Sieu Pheng Phang ◽  
Hieu T. Nguyen ◽  
Ziv Hameiri ◽  
Daniel Macdonald
Keyword(s):  
Dielectric Film ◽  
Multicrystalline Silicon ◽  
Film Properties ◽  
The Impact

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Challenges in Integrating the High-K Gate Dielectric Film to the Conventional Cmos Process Flow

2001 ◽  
Vol 670 ◽  
Author(s):  
Avinash Agarwal ◽  
Michael Freiler ◽  
Pat Lysaght ◽  
Loyd Perrymore ◽  
Renate Bergmann ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Dielectric Film ◽  
Cmos Process ◽  
Gate Stack ◽  
Process Flow ◽  
High K ◽  
High K Materials ◽  
Wet Etch ◽  
The Impact ◽  
High K Gate Dielectric

ABSTRACTZrO2 and HfO2 and their alloys with SiO2 are currently among the leading high-k materials for replacing SiOxNy as the gate dielectric for the sub-100 nm technology nodes. International SEMATECH (ISMT) is currently investigating integration issues associated with this required change in materials. Our work has focused on the integration of ALCVD deposited ZrO2 and HfO2 with an industry standard conventional MOSFET process flow with poly-Si electrode. Since the impact of contamination by these new high-k materials introduced in a production fab has not yet been established, it becomes very critical to prevent cross- contamination through the process tools in the fab. A baseline study was completed within ISMT's fab and appropriate protocols for handling high-k materials have been established. The integrated high-k gate stack in a conventional transistor flow should not only meet all the performance requirements of scaled transistors, but the gate dielectric film should be able withstand high-temperature anneal steps. Reactions between ZrO2 and Si have been observed at temperatures as low as 560°C (during the amorphous Si deposition process). Various wet chemistries were also evaluated for removing the high-k film inadvertently deposited on wafer backside, and it was found that ZrO2 etches at extremely slow rates in the majority of the common wet etch chemistries available in a fab. A new hot HF based process was found to be successful in lowering Zr contamination on the wafer backside to as low as 1.8 E10 atoms/cm2. The patterning of a high-k gate stack with poly-Si electrode is another area that required considerable focus. Various dry (plasma) etch and wet etch chemistries were evaluated for etching ZrO2 using both blanket films as well as wafers with patterned poly-Si gate over the high-k films. On the full CMOS flow device wafers, most of these wet chemistries resulted in severe pitting in the ZrO2 film remaining over the source/drain (S/D) areas, as well as in the Si substrate and the field oxide. A poly-Si gate over ZrO2 gate dielectric film was successfully patterned using the standard poly-Si gate etch (Cl2/HBr) for the main etch, followed by a combination of HF and H2SO4 clean for removing all of the ZrO2 remaining over the S/D area. This allowed the fabrication of low-resistance contacts to transistor S/D areas, which ultimately resulted in demonstration of functional transistors with high-k gate dielectric films.

Improvement of the photocatalytic degradation property of atomic layer deposited ZnO thin films: the interplay between film properties and functional performances

2015 ◽  
Vol 3 (21) ◽  
pp. 11453-11461 ◽  
Author(s):  
V. Rogé ◽  
N. Bahlawane ◽  
G. Lamblin ◽  
I. Fechete ◽  
F. Garin ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photocatalytic Degradation ◽  
Atomic Layer ◽  
Photocatalytic Properties ◽  
Zno Thin Films ◽  
Film Properties ◽  
Layer Deposition ◽  
The Impact

In this work, we have evidenced the impact of stoichiometry on the photocatalytic properties of ZnO nanofilms grown by atomic layer deposition (ALD).

Efficiency-Limiting Recombination in Multicrystalline Silicon Solar Cells

2013 ◽  
Vol 205-206 ◽  
pp. 110-117 ◽  
Author(s):  
Martin C. Schubert ◽  
Jonas Schön ◽  
Alireza Abdollahinia ◽  
Bernhard Michl ◽  
Wolfram Kwapil ◽  
...  
Keyword(s):  
Solar Cells ◽  
Signal To Noise Ratio ◽  
Iron Concentration ◽  
Multicrystalline Silicon ◽  
Cell Parameters ◽  
Cell Efficiency ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
The Impact

This work presents recent advances in the characterisation of carrier recombination and impurities at Fraunhofer ISE. The role of iron contamination during crystallisation is analysed in more detail. Numerical simulations and comparisons to experimental data are presented which demonstrate the impact of iron from the crucible and crucible coating and show the in-diffusion of iron into the silicon melt as well as into the solid silicon during crystal cooling. Measurements of spatially resolved carrier lifetime and interstitial iron concentration on wafers after phosphorus diffusion gettering are used as input for cell efficiency modelling which reveals the specific and quantitative role of iron on cell parameters in multicrystalline silicon. A new photoluminescence based method is presented which quantitatively determines the interstitial iron concentration in finished solar cells. We finally present advances in defect characterisation with sub-micrometre resolution: We show recent progress in micro photoluminescence spectroscopy for the quantitative measurement of interstitial chromium with high spatial resolution. A further development of this setup will be discussed: By combining the principle of Light Beam Induced Current (LBIC) or voltage (LBIV) and the highly localized illumination, images of carrier recombination at local defects are presented which feature a, compared to EBIC, higher signal-to-noise ratio.

Borophosphosilicate Glass(BPSG) Fusion Using Rapid Thermal Annealing and Steam Reflow: Physical Properties and Device Implications

1994 ◽  
Vol 342 ◽  
Author(s):  
Mike Maxim ◽  
Mansour Moinpour ◽  
John Chu ◽  
Hien Nguyen ◽  
Phil Freiberger ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Reflow Process ◽  
Film Properties ◽  
Flow Angle ◽  
Surface Stability ◽  
High Temperature Processing ◽  
As Stress ◽  
The Impact ◽  
Borophosphosilicate Glass ◽  
Processing Steps

ABSTRACTWith decreasing device geometry to below sub micron dimensions, there is a greater emphasis on reducing the thermal budget by shortening and/or eliminating high temperature processing steps. The use of RTP for borophosphosilicate glass (BPSG) fusion/reflow process, which is conventionally performed in diffusion furnaces in temperature range of 850-900 °C, has gained some acceptance in recent years. BPSG films were prepared by an atmosphericpressure chemical vapor deposition(APCVD) process. BPSG film properties such as stress, shrinkage, dopant uniformity and surface stability, step coverage, and flow angle, have been examined as a function of densification/reflow cycle. We used RTP-only, furnace-only, and RTP/furnace reflow annealing cycles. The impact of various BPSG fusion scenarios on underlying Ti salicide and P-channel and N-channel devices is discussed.

Open Resonator Technique for Measurement of Thin Dielectric Film Properties on Optically Dense Substrates

2000 ◽  
Vol 631 ◽  
Author(s):  
Sergey Dudorov ◽  
Dmitri Lioubtchenko ◽  
Juha Mallat ◽  
Jussi Tuovinen ◽  
Antti V. Räisänen
Keyword(s):  
Dielectric Film ◽  
Open Resonator ◽  
Dielectric Substrate ◽  
Dielectric Films ◽  
Film Properties ◽  
Thin Dielectric Film ◽  
Direct Measurements ◽  
Device Applications ◽  
Thin Dielectric Films ◽  
Good Agreement

ABSTRACTThin dielectric films on the dielectric substrate are widely employed in millimeter and submillimeter wave device applications, so the problem of precise measurement of their properties is important. One of the most accurate technique for measurement of dielectric properties is the open resonator technique.In this work we propose the method for measurements of thin dielectric film properties on the dielectric substrate using the open semispherical resonator. A good agreement (within 1 %) was obtained in refractive index data between results obtained with direct measurements and with proposed method for thin layer of SI GaAs on a sapphire substrate.

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