Nitride-based high power flip-chip near-UV LEDs with reflective submount

2007 ◽  
Vol 1 (1) ◽  
pp. 27-30 ◽  
Author(s):  
C.F. Shen ◽  
S.P. Huang ◽  
S.C. Shei ◽  
R.H. Horng ◽  
S.J. Chang ◽  
...  
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Uv Leds

Development of high-power UV LEDs for epoxy curing applications

2010 ◽  
Author(s):  
W. H. Liu ◽  
C. F. Chu ◽  
C. C. Cheng ◽  
K. H. Hsu ◽  
Y. T. Chung ◽  
...  
Keyword(s):  
High Power ◽  
Epoxy Curing ◽  
Uv Leds

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

High Power LED Integrated With Silicon-Based Thermoelectric Cooler Package

2007 ◽  
Author(s):  
Ming-Ji Dai ◽  
Chih-Kuang Yu ◽  
Chun Kai Liu ◽  
Sheng-Liang Kuo
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Infrared Camera ◽  
Junction Temperature ◽  
Integrating Sphere ◽  
Thermoelectric Cooler ◽  
High Power Led ◽  
Silicon Based ◽  
Light Efficiency

A new thermal management application of silicon-based thermoelectric (TE) cooler integrated with high power light emitting diode (LED) is investigated in present study. The silicon-based TE cooler herein is fabricated by MEMS fabrication technology and flip-chip assembly process that is used for high power LED cooling. An electrical-thermal conversion method is used to estimate the junction temperature of LED. Moreover, the Integrating Sphere is also used to measure the light efficiency of LED. The thermal images photographed by infrared camera demonstrated the cooling function of the silicon-based TE devices. The results also show that high power LED integrated with silicon-based thermoelectric cooler package can effectively reduce the thermal resistance to zero. In addition, the light efficiency of the LED (1W) will increase under low TE cooler input power (0.55W), which is about 1.3 times of that without TE cooler packaging.

scholarly journals Functional Analysis in Long-Term Operation of High Power UV-LEDs in Continuous Fluoro-Sensing Systems for Hydrocarbon Pollution

Sensors ◽  
2016 ◽  
Vol 16 (3) ◽  
pp. 293 ◽  
Author(s):  
Francisco Arques-Orobon ◽  
Neftali Nuñez ◽  
Manuel Vazquez ◽  
Vicente Gonzalez-Posadas
Keyword(s):  
Functional Analysis ◽  
High Power ◽  
Hydrocarbon Pollution ◽  
Term Operation ◽  
Sensing Systems ◽  
Uv Leds

Analysis of new direct on PCB board attached high power flip-chip LEDs

2015 ◽  
Author(s):  
Gordon Elger ◽  
Maximilian Schmid ◽  
Alexander Hanb ◽  
E Liu ◽  
Markus J. Klein ◽  
...  
Keyword(s):  
High Power ◽  
Flip Chip
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