Current Carrying Capability of Sn0.7Cu Solder Bumps in Flip Chip Modules for High Power Applications

2007 ◽  
Author(s):  
Lakshmi N. Ramanathan ◽  
Tien-Yu Tom Lee ◽  
Jin-Wook Jang ◽  
Seung-Hyun Chae ◽  
Paul S. Ho
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Solder Bumps ◽  
Current Carrying Capability

The Use of Precision Selective Area Milling for Failure Analysis of Flip-Chip Packages

2002 ◽  
Author(s):  
George F. Gaut
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Solder Bump ◽  
Selective Area ◽  
Fill Material ◽  
Solder Bumps ◽  
Time Required

Abstract Access to the solder bump and under-fill material of flip-chip devices has presented a new problem for failure analysts. The under-fill and solder bumps have also added a new source for failure causes. A new tool has become available that can reduce the time required to analyze this area of a flip-chip package. By using precision selective area milling it is possible to remove material (die or PCB) that will allow other tools to expose the source of the failure.

scholarly journals Demonstration of fine pitch FCOB (Flip Chip on Board) assembly based on solder bumps at Fermilab

2009 ◽  
Vol 4 (11) ◽  
pp. T11001-T11001
Author(s):  
E Skup ◽  
M Trimpl ◽  
R Yarema ◽  
J C Yun
Keyword(s):  
Flip Chip ◽  
Fine Pitch ◽  
Solder Bumps

Defect Detection of Flip Chip Solder Bumps Through Local Temporal Coherence Analysis of Laser Ultrasound Signals

2007 ◽  
Author(s):  
Jin Yang ◽  
Charles Ume
Keyword(s):  
Defect Detection ◽  
Flip Chip ◽  
Solder Bump ◽  
Temporal Coherence ◽  
Coherence Analysis ◽  
Laser Ultrasound ◽  
Surface Mount ◽  
Flip Chips ◽  
Solder Bumps ◽  
Ultrasound Signals

Microelectronics packaging technology has evolved from through-hole and bulk configuration to surface-mount and small-profile ones. In surface mount packaging, such as flip chips, chip scale packages (CSP), and ball grid arrays (BGA), chips/packages are attached to the substrates or printed wiring boards (PWB) using solder bump interconnections. Solder bumps, which are hidden between the device and the substrate/board, are no longer visible for inspection. A novel solder bump inspection system has been developed using laser ultrasound and interferometric techniques. This system has been successfully applied to detect solder bump defects including missing, misaligned, open, and cracked solder bumps in flip chips, and chip scale packages. This system uses a pulsed Nd:YAG laser to induce ultrasound in the thermoelastic regime and the transient out-of-plane displacement response on the device surface is measured using the interferometric technique. In this paper, local temporal coherence (LTC) analysis of laser ultrasound signals is presented and compared to previous signal processing methods, including Error Ratio and Correlation Coefficient. The results show that local temporal coherence analysis increases measurement sensitivity for inspecting solder bumps in packaged electronic devices. Laser ultrasound inspection results are also compared with X-ray and C-mode Scanning Acoustic Microscopy (CSAM) results. In particular, this paper discusses defect detection for a 6.35mm×6.35mm×0.6mm PB18 flip chip and a flip chip (SiMAF) with 24 lead-free solder bumps. These two flip chip specimens are both non-underfilled.

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

A Fluxless Flip-Chip Bonding for VCSEL Arrays Using Silver-Coated Indium Solder Bumps

2004 ◽  
Vol 27 (4) ◽  
pp. 246-253 ◽  
Author(s):  
K.-M. Chu ◽  
J.-S. Lee ◽  
H.S. Cho ◽  
H.-H. Park ◽  
D.Y. Jeon
Keyword(s):  
Flip Chip ◽  
Flip Chip Bonding ◽  
Solder Bumps ◽  
Vcsel Arrays

Analysis of Interface Cracking in Flip Chip Packages With Viscoplastic Solder Deformation

2003 ◽  
Author(s):  
M. J. Heffes ◽  
H. F. Nied
Keyword(s):  
Flip Chip ◽  
Strain Energy Release ◽  
Solder Material ◽  
Elastic Plastic ◽  
Linear Elastic ◽  
Interfacial Cracks ◽  
Fracture Parameters ◽  
Solder Bumps ◽  
Interface Cracking ◽  
Semiconductor Packages

This paper examines the modeling of viscoplastic solder behavior in the vicinity of interfacial cracking for flip chip semiconductor packages. Of particular interest is the relationship between viscoplastic deformation in the solder bumps and any possible interface cracking between the epoxy underfill layer and the silicon die. A 3-D finite element code, developed specifically for the study of interfacial fracture problems, was modified to study how viscoplastic solder material properties would affect fracture parameters such as strain energy release rate and phase angle for nearby interfacial cracks. Simplified two-layer periodic symmetry models were developed to investigate these interactions. Comparison of flip chip results using different solder material models showed that viscoplastic models yielded lower stress and fracture parameters than time independent elastic-plastic simulations. It was also found that adding second level attachment greatly increases the magnitude of the solder strain and fracture parameters. As expected, the viscoplastic and temperature dependent elastic-plastic results exhibited greater similarity to each other than results based solely on linear elastic properties.

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