Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs

1992 ◽  
Vol 28 (3) ◽  
pp. 295 ◽  
Author(s):  
K. Horio
Keyword(s):  
Numerical Simulation ◽  
Drain Current ◽  
Current Transients ◽  
Trapping Effects

Modeling and 2D Numerical Simulation of Transient Phenomena in Floating Body Soi Mosfets

1997 ◽  
Vol 490 ◽  
Author(s):  
A. M. Ionescu ◽  
F. Chaudier ◽  
A. Chovet
Keyword(s):  
Numerical Simulation ◽  
Drain Current ◽  
Analytical Models ◽  
Floating Body ◽  
Fully Depleted ◽  
Transient Phenomena ◽  
Simulation Based ◽  
Original Contribution ◽  
2D Numerical Simulation ◽  
Current Transients

ABSTRACTThis paper presents a numerical-simulation-based investigation of drain current transients in floating body partially and fully depleted n-channel SOI MOSFETs. For both Zerbst-type and overshoot transients, analytical models are developed and validated. An original contribution concerns the detailed study of drain and source junction influences on the transient regime.

Role of the substrate during pseudo-MOSFET drain current transients

2010 ◽  
Vol 54 (3) ◽  
pp. 316-322 ◽  
Author(s):  
K. Park ◽  
P. Nayak ◽  
D.K. Schroder
Keyword(s):  
Drain Current ◽  
Current Transients

scholarly journals Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1037
Author(s):  
Carlo De Santi ◽  
Matteo Buffolo ◽  
Gaudenzio Meneghesso ◽  
Enrico Zanoni ◽  
Matteo Meneghini
Keyword(s):  
Deep Level ◽  
Dynamic Performance ◽  
Electronic Devices ◽  
Drain Current ◽  
Performance Variation ◽  
Current Voltage ◽  
Real Performance ◽  
Frequency Sweeps ◽  
Current Transients ◽  
Extract Information

In this paper, we compare and discuss the main techniques for the analysis of the dynamic performance of GaN-based transistors. The pulsed current-voltage characterization provides information on the effect of different trapping voltages on various bias points of the device under test, leading to the detection of all the possible effects, as well as to the choice of the optimal filling and measure bias conditions in other techniques. The drain current transients use one of the identified bias configurations to extract information on the deep level signature responsible for the performance variation and, thus, they can pinpoint the corresponding physical crystal lattice configuration, providing useful information to the growers on how the issue can be solved. Finally, given the complex interplay between the filling and emission time constants, the gate frequency sweeps can be used to obtain the real performance in the target operating condition.

Numerical Simulation and Experimental Investigation of the Time-Of-Flight Technique Applied to a-Si:H/a-SiGe:H-Heterojunctions

1993 ◽  
Vol 297 ◽  
Author(s):  
Rudi Brüggemann ◽  
Norbert Bernhard ◽  
Charles Main ◽  
Gottfried H. Bauer
Keyword(s):  
Numerical Simulation ◽  
Experimental Investigation ◽  
Room Temperature ◽  
Drift Mobility ◽  
Electron Current ◽  
Pronounced Difference ◽  
Low Bandgap ◽  
Direction Of Movement ◽  
Current Transients

We report on a comparative study, employing the TOF-technique for the characterization of the properties of a-Si:H/a-SiGe:H-heterojunctions. Both the simulated and experimental electron current transients exhibit a pronounced difference depending on the direction of movement of the excess carriers (from the a-Si:H into the a-SiGe:H or vice versa). For the movement from the low bandgap a-SiGe:H into the a-Si:H we find a char¬acteristic increase in the transient current at room temperature, which, as the simulation can reveal, is attributed to the higher drift mobility in the a-Si:H. A drop in the current is observed when the direction for the transit is from a-Si:H to a-SiGe:H. The post-transit behaviour is dominated by the large amount of trapped carriers which remain on the SiGe side of the sample. The situation for a high barrier between a-Si:H and a-SiC:H and the influence of various parameters on the shape of the current transient are discussed.

Model for photo-induced long-term drain current transients in GaAs MESFETs

1990 ◽  
Vol 68 (5) ◽  
pp. 721-728 ◽  
Author(s):  
PETER GEORGE ◽  
PING K. KO ◽  
CHENMING HU
Keyword(s):  
Drain Current ◽  
Current Transients
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