Modeling and 2D Numerical Simulation of Transient Phenomena in Floating Body Soi Mosfets

1997 ◽  
Vol 490 ◽  
Author(s):  
A. M. Ionescu ◽  
F. Chaudier ◽  
A. Chovet
Keyword(s):  
Numerical Simulation ◽  
Drain Current ◽  
Analytical Models ◽  
Floating Body ◽  
Fully Depleted ◽  
Transient Phenomena ◽  
Simulation Based ◽  
Original Contribution ◽  
2D Numerical Simulation ◽  
Current Transients

ABSTRACTThis paper presents a numerical-simulation-based investigation of drain current transients in floating body partially and fully depleted n-channel SOI MOSFETs. For both Zerbst-type and overshoot transients, analytical models are developed and validated. An original contribution concerns the detailed study of drain and source junction influences on the transient regime.

Improved Performance of 4H-SiC MESFET with Stepped-Channel

2012 ◽  
Vol 271-272 ◽  
pp. 21-25
Author(s):  
Hu Jun Jia ◽  
Yin Tang Yang ◽  
Lian Jin Zhang ◽  
Bao Xing Duan
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Drain Current ◽  
Channel Structure ◽  
Simulation Based ◽  
2D Numerical Simulation ◽  
Simulation Results ◽  
Improved Performance ◽  
First Time ◽  
Conventional Counterpart

A novel 4H-SiC MESFET with stepped-channel (stepped-spacer) structure is proposed for the first time and analyzed by 2D numerical simulation. Based on the stepped buried oxide structure of SOI which can produce additional electrical Electric field peaks, much more advantages can be obtained through a stepped-channel structure compared to that of the field terminal technology, such as an obvious increase of the breakdown voltage which is equal to the electric field to the path integral, and the lower capacitances lead to a higher cut-off frequency. The simulation results show that a 100% higher saturated drain current and a 153% larger breakdown voltage can be obtained utilizing the stepped-channel structure MESFET than those of the conventional counterpart.

Direct numerical simulation–based Reynolds-averaged closure for bubble-induced turbulence

2017 ◽  
Vol 2 (3) ◽  
Author(s):  
Tian Ma ◽  
Claudio Santarelli ◽  
Thomas Ziegenhein ◽  
Dirk Lucas ◽  
Jochen Fröhlich
Keyword(s):  
Numerical Simulation ◽  
Direct Numerical Simulation ◽  
Simulation Based

Numerical simulation based approach for assessment of blast induced deformation pattern in slot raise excavation

2021 ◽  
Vol 144 ◽  
pp. 104816
Author(s):  
Vivek K. Himanshu ◽  
A.K. Mishra ◽  
M.P. Roy ◽  
Ashish K. Vishwakarma ◽  
P.K. Singh
Keyword(s):  
Numerical Simulation ◽  
Deformation Pattern ◽  
Simulation Based
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