A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

2000 ◽  
Vol 47 (11) ◽  
pp. 2236-2237
Author(s):  
K. Ahmed ◽  
J.J. Wortman ◽  
J.R. Hauser
Keyword(s):  
Numerical Simulation ◽  
Drain Current ◽  
Interface Trap ◽  
Two Dimensional ◽  
Weak Inversion ◽  
Ultrathin Oxides ◽  
Current Transients

Modeling and 2D Numerical Simulation of Transient Phenomena in Floating Body Soi Mosfets

1997 ◽  
Vol 490 ◽  
Author(s):  
A. M. Ionescu ◽  
F. Chaudier ◽  
A. Chovet
Keyword(s):  
Numerical Simulation ◽  
Drain Current ◽  
Analytical Models ◽  
Floating Body ◽  
Fully Depleted ◽  
Transient Phenomena ◽  
Simulation Based ◽  
Original Contribution ◽  
2D Numerical Simulation ◽  
Current Transients

ABSTRACTThis paper presents a numerical-simulation-based investigation of drain current transients in floating body partially and fully depleted n-channel SOI MOSFETs. For both Zerbst-type and overshoot transients, analytical models are developed and validated. An original contribution concerns the detailed study of drain and source junction influences on the transient regime.

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