Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels

1994 ◽  
Vol 41 (8) ◽  
pp. 1340-1346 ◽  
Author(s):  
K. Horio ◽  
Y. Fuseya
Keyword(s):  
Drain Current ◽  
Deep Levels ◽  
Two Dimensional ◽  
Current Transients ◽  
Insulating Substrates

scholarly journals A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han
Keyword(s):  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Image Force ◽  
Drain Current ◽  
Equivalent Model ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

Role of the substrate during pseudo-MOSFET drain current transients

2010 ◽  
Vol 54 (3) ◽  
pp. 316-322 ◽  
Author(s):  
K. Park ◽  
P. Nayak ◽  
D.K. Schroder
Keyword(s):  
Drain Current ◽  
Current Transients

Modeling and 2D Numerical Simulation of Transient Phenomena in Floating Body Soi Mosfets

1997 ◽  
Vol 490 ◽  
Author(s):  
A. M. Ionescu ◽  
F. Chaudier ◽  
A. Chovet
Keyword(s):  
Numerical Simulation ◽  
Drain Current ◽  
Analytical Models ◽  
Floating Body ◽  
Fully Depleted ◽  
Transient Phenomena ◽  
Simulation Based ◽  
Original Contribution ◽  
2D Numerical Simulation ◽  
Current Transients

ABSTRACTThis paper presents a numerical-simulation-based investigation of drain current transients in floating body partially and fully depleted n-channel SOI MOSFETs. For both Zerbst-type and overshoot transients, analytical models are developed and validated. An original contribution concerns the detailed study of drain and source junction influences on the transient regime.

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