High performance resonant tunnelling structures on GaAs substrates

1990 ◽  
Vol 26 (5) ◽  
pp. 340 ◽  
Author(s):  
H. Riechert ◽  
D. Bernklau ◽  
J.-P. Reithmaier ◽  
R.D. Schnell
Keyword(s):  
High Performance ◽  
Resonant Tunnelling ◽  
Gaas Substrates

High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates

2002 ◽  
Vol 23 (6) ◽  
pp. 297-299 ◽  
Author(s):  
Y.M. Kim ◽  
M. Dahlstrom ◽  
S. Lee ◽  
A.J.W. Rodwell ◽  
A.C. Gossard
Keyword(s):  
High Performance ◽  
Gaas Substrates

Resonant tunnelling of holes in double barrier heterostructures grown by MBE on (1 1 0) oriented GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 919-923 ◽  
Author(s):  
M. Henini ◽  
R.K. Hayden ◽  
T. Takamasu ◽  
N. Miura ◽  
L. Eaves ◽  
...  
Keyword(s):  
Double Barrier ◽  
Resonant Tunnelling ◽  
Gaas Substrates

scholarly journals High-performance organic/inorganic hybrid heterojunction based on Gallium Arsenide (GaAs) substrates and a conjugated polymer

2015 ◽  
Vol 357 ◽  
pp. 2189-2197 ◽  
Author(s):  
D.A. Jameel ◽  
J.F. Felix ◽  
M. Aziz ◽  
N. Al Saqri ◽  
D. Taylor ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Conjugated Polymer ◽  
High Performance ◽  
Inorganic Hybrid ◽  
Gaas Substrates

High performance long-wavelength QD diode lasers on GaAs substrates

2003 ◽  
Author(s):  
N.A. Maleev ◽  
A.R. Kovsh ◽  
A.E. Zhukov ◽  
S.S. Mikhrin ◽  
A.P. Vasil'ev ◽  
...  
Keyword(s):  
High Performance ◽  
Diode Lasers ◽  
Long Wavelength ◽  
Gaas Substrates

High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

2003 ◽  
Vol 39 (15) ◽  
pp. 1126 ◽  
Author(s):  
N.N. Ledentsov ◽  
A.R. Kovsh ◽  
A.E. Zhukov ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Quantum Dot Lasers ◽  
Gaas Substrates

Improvement in Uniformity of Type-II p-GaAsSb/n-InAs Nanowires on GaAs Substrates by the Insertion of GaAs Segments in Position-controlled VLS Method

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 331-336
Author(s):  
Kenichi Kawaguchi ◽  
Tsuyoshi Takahashi ◽  
Naoya Okamoto ◽  
Masaru Sato ◽  
Michihiko Suhara
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Growth Strategy ◽  
Type Ii ◽  
Tunnel Diodes ◽  
Au Catalyst ◽  
Vapor Liquid Solid ◽  
Gaas Substrates ◽  
Inas Nanowires ◽  
Anomalous Growth

AbstractTo improve the uniformity of type-II GaAsSb/InAs nanowires (NWs) grown on GaAs substrate using the position-controlled vapor-liquid-solid (VLS) method, the insertion of GaAs NW segments was investigated. In conventional InAs NWs grown directly on patterned GaAs substrate at 430°C, anomalous growth occurred in some pattern holes, and the proportion of holes having anomalous growth was in particular pronounced when a large Au catalyst diameter (80 nm) was employed, which indicates that the strain coming from the lattice-mismatched system affected the NW growth. With the insertion of GaAs segments, the yield of vertical NWs drastically improved for all pattern conditions. The uniformity of NWs was maintained after the growth of p-GaAsSb segments, and well-organized, two-dimensional arrays of type-II GaAsSb/InAs diode NWs were obtained. Moreover, the formation of p-n junctions at the GaAsSb/InAs interface was clearly observed using scanning capacitive microscopy. These results show that the investigated growth strategy is promising for the development of high-performance NW tunnel diodes.

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