High performance long-wavelength QD diode lasers on GaAs substrates

2003 ◽  
Author(s):  
N.A. Maleev ◽  
A.R. Kovsh ◽  
A.E. Zhukov ◽  
S.S. Mikhrin ◽  
A.P. Vasil'ev ◽  
...  
Keyword(s):  
High Performance ◽  
Diode Lasers ◽  
Long Wavelength ◽  
Gaas Substrates

High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

2002 ◽  
Vol 36 (11) ◽  
pp. 1315-1321 ◽  
Author(s):  
S. S. Mikhrin ◽  
A. E. Zhukov ◽  
A. R. Kovsh ◽  
N. A. Maleev ◽  
A. P. Vasil’ev ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Diode Lasers ◽  
Long Wavelength ◽  
Gaas Substrates

Metamorphic growth of long-wavelength saturable absorber on GaAs substrates

2005 ◽  
Author(s):  
A. Vainionpaa ◽  
S. Suomalainen ◽  
O. Tengvall ◽  
T. Hakulinen ◽  
R. Herda ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Long Wavelength ◽  
Gaas Substrates

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1040-L1042 ◽  
Author(s):  
Makoto Kudo ◽  
Kiyoshi Ouchi ◽  
Jun-ichi Kasai ◽  
Tomoyoshi Mishima
Keyword(s):  
Quantum Wells ◽  
Lattice Strain ◽  
Type Ii ◽  
Long Wavelength ◽  
Gaas Substrates ◽  
Type Ii Quantum Wells

Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates

2017 ◽  
Author(s):  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
Yu. M. Shernyakov ◽  
M. M. Kulagina ◽  
A. S. Payusov ◽  
...  
Keyword(s):  
Diode Lasers ◽  
High Index ◽  
Gaas Substrates

High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates

2002 ◽  
Vol 23 (6) ◽  
pp. 297-299 ◽  
Author(s):  
Y.M. Kim ◽  
M. Dahlstrom ◽  
S. Lee ◽  
A.J.W. Rodwell ◽  
A.C. Gossard
Keyword(s):  
High Performance ◽  
Gaas Substrates

Effect of Substrate-Surface Orientation on the N Incorporation in GaAsN Films on GaAs Grown by MOVPE

2008 ◽  
Vol 55-57 ◽  
pp. 825-828 ◽  
Author(s):  
P. Klangtakai ◽  
S. Sanorpim ◽  
S. Kuboya ◽  
R. Katayama ◽  
Kentaro Onabe
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Substrate Surface ◽  
Surface Orientation ◽  
X Ray Diffraction ◽  
N Content ◽  
Long Wavelength ◽  
The Difference ◽  
N Incorporation ◽  
Novel Structures

The GaAs1-xNx alloy semiconductor has been grown on GaAs (001), (111)A and (011) substrates by metalorganic vapor-phase epitaxy. High resolution X-ray diffraction and Raman scattering were employed to examine the effective N content and the growth rate, as a function of the substrate-surface orientation. The growth rate, which was assessed though the clear Pendellösung fringes, and the N content were found to change dramatically with the substrate-surface orientations. The N content was determined in the order (111)A > (001) > (011). While, the growth rate is in the order, (001) > (011) > (111)A. The effect of substrate-surface orientation on the N incorporation found in the present study is interpreted in terms of the difference in the growth rate on each surface orientation and the number of dangling bonds with which the N atoms can be trapped on the growing surface. Our results show that controlled nitrogen incorporating for GaAsN is successfully achieved and can be applied to the fabrication of some novel structures such as a spontaneous N content modulated structure, which is applicable to high performance long wavelength laser diodes.

scholarly journals Pyropheophytin a Accompanies Pheophytin a in Darkened Light Grown Cells of Euglena1

1981 ◽  
Vol 36 (9-10) ◽  
pp. 827-833 ◽  
Author(s):  
Siegrid Schoch ◽  
Hugo Scheer ◽  
Jerome A. Schiff ◽  
Wolfhart Rüdiger ◽  
Harold W. Siegelman
Keyword(s):  
High Performance Liquid Chromatography ◽  
Absorption Spectrum ◽  
High Performance ◽  
Dilute Acid ◽  
Reverse Phase ◽  
Intact Cells ◽  
Pheophytin A ◽  
Long Wavelength ◽  
Dividing Cells ◽  
Ether Solution

Abstract Chromatography Light-grown non-dividing cells of Euglena gracilis Klebs var. bacillaris Cori form pheophytin a like pigments from chlorophyll a without loss of viability when they are allowed to incubate in darkness without shaking. This is accompanied by the loss of long-wavelength components in the red absorption band of intact cells. After extraction of these cells with acetone, transfer of the pigments to ether and treatment of the ether solution with dilute acid, two pigments can be separated by high performance liquid chromatography on reverse phase silica gel (RP-8) using methanol: water = 95:5 (v/v) as the eluting solvent: In addition to pheophytin a, the eluate contains an unknown pigment. With increasing times of incubation of the cells in darkness, the proportion of pheophytin a decreases and the proportion of the unknown increases suggesting, that the unknown is formed from pheophytin a. This pigment has been identified as pyropheophytin a. It has the same absorption spectrum as pyropheophytin a (prepared by pyridine pyrolysis of pheophytin a) and contains phytol as the longchain esterifying alcohol. On conversion to the methyl ester, the resulting methyl phorbide is identical with authentic pyromethylpheophorbide a by tic, hplc, absorption, absorption difference and mass spectros­ copy. This is the first report of pyropheophytin a or any pyrochlorophyll derivative from plants or oxygenic plant-like microorganisms where it may serve as an intermediate in chlorophyll degradation.

High-performance diode lasers based on coupledlarge-optical-cavity design

2018 ◽  
Author(s):  
N.Yu. Gordeev ◽  
A.S. Payusov ◽  
Yu.M. Shernyakov ◽  
S.A. Mintairov ◽  
N.A. Kalyuzhnyy ◽  
...  
Keyword(s):  
High Performance ◽  
Diode Lasers ◽  
Optical Cavity ◽  
Cavity Design
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