Improvement in Uniformity of Type-II p-GaAsSb/n-InAs Nanowires on GaAs Substrates by the Insertion of GaAs Segments in Position-controlled VLS Method

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 331-336
Author(s):  
Kenichi Kawaguchi ◽  
Tsuyoshi Takahashi ◽  
Naoya Okamoto ◽  
Masaru Sato ◽  
Michihiko Suhara
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Growth Strategy ◽  
Type Ii ◽  
Tunnel Diodes ◽  
Au Catalyst ◽  
Vapor Liquid Solid ◽  
Gaas Substrates ◽  
Inas Nanowires ◽  
Anomalous Growth

AbstractTo improve the uniformity of type-II GaAsSb/InAs nanowires (NWs) grown on GaAs substrate using the position-controlled vapor-liquid-solid (VLS) method, the insertion of GaAs NW segments was investigated. In conventional InAs NWs grown directly on patterned GaAs substrate at 430°C, anomalous growth occurred in some pattern holes, and the proportion of holes having anomalous growth was in particular pronounced when a large Au catalyst diameter (80 nm) was employed, which indicates that the strain coming from the lattice-mismatched system affected the NW growth. With the insertion of GaAs segments, the yield of vertical NWs drastically improved for all pattern conditions. The uniformity of NWs was maintained after the growth of p-GaAsSb segments, and well-organized, two-dimensional arrays of type-II GaAsSb/InAs diode NWs were obtained. Moreover, the formation of p-n junctions at the GaAsSb/InAs interface was clearly observed using scanning capacitive microscopy. These results show that the investigated growth strategy is promising for the development of high-performance NW tunnel diodes.

High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate

2009 ◽  
Author(s):  
Binh-Minh Nguyen ◽  
Darin Hoffman ◽  
Edward K. Huang ◽  
Pierre-Yves Delaunay ◽  
Manijeh Razeghi
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Type Ii ◽  
Type Ii Superlattice

VLS Growth of Position-controlled InP Nanowires and Formation of Radial Heterostructures on Mask-patterned InP Substrates

2014 ◽  
Vol 1659 ◽  
pp. 181-186 ◽  
Author(s):  
Kenichi Kawaguchi ◽  
Hisao Sudo ◽  
Manabu Matsuda ◽  
Mitsuru Ekawa ◽  
Tsuyoshi Yamamoto ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Wavelength Region ◽  
Two Dimensional ◽  
Au Catalyst ◽  
Vapor Liquid Solid ◽  
Vls Growth ◽  
Hcl Gas ◽  
Inp Substrates ◽  
Anomalous Growth

ABSTRACTPosition-controlled InP nanowires (NWs) with separations of 10-100 μm were grown by the vapor-liquid-solid (VLS) method using Au-deposited SiO2-mask-patterned InP substrates. Excess indium species diffused from the large mask region formed plural tilted NW-like structures from single openings in addition to the vertical VLS NWs formed by Au catalyst. The introduction of HCl gas during the NW growth was found to efficiently suppress the tilted NW-like structures. Vertical InP NWs without anomalous growth were successfully formed by controlling the HCl flow rate. Moreover, single InP/InAsP/InP quantum wells (QWs) with wurtzite crystal phase structure were epitaxially grown on the sidewall of the position-controlled InP NWs, and two-dimensional arrayed patterns of photoluminescence (PL) coming from the radial QWs were clearly observed in the 1.3-μm wavelength region at room temperature.

Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate

2009 ◽  
Vol 95 (17) ◽  
pp. 173505 ◽  
Author(s):  
S. Abdollahi Pour ◽  
B-M. Nguyen ◽  
S. Bogdanov ◽  
E. K. Huang ◽  
M. Razeghi
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Type Ii ◽  
Long Wavelength ◽  
Long Wavelength Infrared

scholarly journals InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 38
Author(s):  
Hackiewicz ◽  
Kopytko ◽  
Rutkowski ◽  
Martyniuk ◽  
Ciura
Keyword(s):  
Gaas Substrate ◽  
Room Temperature ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Type Ii ◽  
Electrical And Optical Properties ◽  
Mid Infrared ◽  
Type Ii Superlattice ◽  
Gaas Substrates ◽  
Optical Immersion

Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but at lower temperatures the misfit dislocations become more important and detectors grown on GaSb become better.

On the Distance Directional Growth of GaxOy Nanomaterials Concerning the Surface Au Droplets and Au/Ga/O Clusters Outward Diffusion on the Separated Au Islands/Strips on Gaas Substrate Using Thermal Vapor-Liquid-Solid Method

2020 ◽  
Vol 63 ◽  
pp. 31-46
Author(s):  
Khac An Dao ◽  
Tien Thanh Nguyen ◽  
Hong Trang Pham
Keyword(s):  
Gaas Substrate ◽  
Solid Phase ◽  
Kirkendall Effect ◽  
X Ray Diffraction ◽  
Au Catalyst ◽  
Vapor Liquid Solid ◽  
Directional Growth ◽  
Outward Diffusion ◽  
Growth Method ◽  
Vapor Liquid

This paper outlines some experimental results and discusses the new growth method for growing the different GaxOy nanomaterials formed during the outward diffusion of the surface nanoclusters (SNCs) including the Au droplets and/or surface Au/Ga/O nanoclusters from the Au separated islands/strips being on GaAs substrate during the thermal Vapor -Liquid -Solid method with two steps temperature mode. Depending on the technological conditions, during the outward diffusion of the SNCs from the Au catalyst island/strip, the different sizes, morphologies and features of nanomaterials will be formed along the surface diffusion direction with the decreasing sizes. This growth method to be so called the distance directional growth method, it has not reported in the Literature. The nanomaterial growth process here could be explained by the solid - solid phase with the self-growth mechanism from the moving-diffusing SNCs with the features formed already before based on their chemical- physical interactions between the Au catalyst island/strip and GaAs substrate. In the suitable technological conditions the surface nanoscale Kirkendall effect with Kirkendall voids also completely formed... Based on the results of Field Emission Scanning electron Microscope (FESEM), the Energy-Dispersive X-ray diffraction (EDX) measurements, the formation mechanism and effect of the SNCs outward diffusion on the growth of different GaxOy nanomaterials have discussed more in detailed.. The diffusivities of the SNCs depending on technological conditions in the different samples have estimated by the random walk theory, their values are in the range of 8.35x10-10 to 10-11 m2/sec. The distance directional growth method could be applied for the growing and controlling the nanomaterials configurations outside the Au catalyst island/strip on GaAs substrate with the different sizes for nano devices application.

Type-II InAs/InGaSb Superlattices on Compliant GaAs Substrates

1999 ◽  
Vol 607 ◽  
Author(s):  
G. J. Brown ◽  
K. Mahalingam ◽  
A. Saxler ◽  
R. Linville ◽  
F. Szmulowicz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Bonding Process ◽  
Type Ii ◽  
Ingaas Layer ◽  
X Ray ◽  
Gaas Substrates ◽  
Compliant Layer

AbstractType-II InAs/GaInSb superlattices of different designs have been grown by molecular beam epitaxy on wafer bonded InGaAs on GaAs, and on standard GaSb substrates. The extremely thin (∼100Å) InGaAs layer is loosely bonded to the GaAs substrate and serves as a compliant layer for subsequent epitaxy of a larger lattice constant material. The effects of these substrates on the optical, electrical, and structural properties of the superlattice were studied. The superlattices grown on bonded substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb. The photoresponse results for the superlattices on the bonded 2 inch diameter substrates, with the InGaAs compliant layer, were not as favorable as early work on similar, smaller area, bonded substrates. However, refinements to the wafer bonding process to eliminate microvoids between the bonded layers will provide higher quality superlattices.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

2009 ◽  
Vol 94 (22) ◽  
pp. 223506 ◽  
Author(s):  
Binh-Minh Nguyen ◽  
Darin Hoffman ◽  
Edward Kwei-wei Huang ◽  
Simeon Bogdanov ◽  
Pierre-Yves Delaunay ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Type Ii
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