Identification and localisation of gate oxide weaknesses in n-MOS transistors through Fowler-Nordheim tunnelling and SPICE simulation

1990 ◽  
Vol 26 (4) ◽  
pp. 230
Author(s):  
D. Krakauer ◽  
B.S. Doyle
Keyword(s):  
Gate Oxide ◽  
Mos Transistors ◽  
Spice Simulation

Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 387-389 ◽  
Author(s):  
Gabriela A. Rodriguez-Ruiz ◽  
Edmundo A. Gutierrez-Dominguez ◽  
Arturo Sarmiento-Reyes ◽  
Zlatan Stanojevic ◽  
Hans Kosina ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Simulation Results ◽  
Gate Oxide Tunneling

Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide

1990 ◽  
Vol 37 (3) ◽  
pp. 708-717 ◽  
Author(s):  
M. Bourcerie ◽  
B.S. Doyle ◽  
J.-C. Marchetaux ◽  
J.-C. Soret ◽  
A. Boudou
Keyword(s):  
Gate Oxide ◽  
Interfacial Region ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Oxide Traps

Study on Effect of Electron Beam Irradiation in SEM-Based Nanoprobing on MOS Transistor

2016 ◽  
Author(s):  
Hara Noriko ◽  
Bito Nanami ◽  
Ebisuda Mai ◽  
Tabata Suguru ◽  
Numazaki Naoki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Failure Analysis ◽  
Oxide Layer ◽  
Electron Beam Irradiation ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Beam Irradiation ◽  
Mos Transistor ◽  
Significant Change ◽  
Iv Curves

Abstract Nanoprobing is an indispensable method for failure analysis to identify failure cells and to approach the root causes, providing electric characteristics of the failure of the MOS transistor. In this paper, the characteristic degradation on MOS transistors with SEM-based nanoprobing is studied to find out the critical accelerating voltage, comparing it to the characteristic obtained by the mechanical prober. In this experiment, n-type MOS transistors with thick gate oxide layer (40nm) were used. The effect of electron beam irradiation was also investigated. Significant change was not observed in n+(drain)/p-well IV curves. The paper looks at the influence of the additional phenomena during SEM-based nanoprobing analysis on a characteristics change of a specimen. For MOS transistor with thick gate oxide used in this study, irradiation influence is possibly more notable than normal voltage cell cases.

Silicon-on-diamond MOS-transistors with thermally grown gate oxide

2002 ◽  
Author(s):  
B. Edholm ◽  
L. Vestling ◽  
M. Bergh ◽  
S. Tiensuu ◽  
A. Soderbarg
Keyword(s):  
Gate Oxide ◽  
Mos Transistors ◽  
Thermally Grown

M.O.S. Transistors with > 1 μm Thick Gate Oxide for Ionizing Radiation Dosimetry

1993 ◽  
Vol 302 ◽  
Author(s):  
F. Gessinn ◽  
G. Sarrabayrouse
Keyword(s):  
Ionizing Radiation ◽  
Radiation Dosimetry ◽  
Temperature Response ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
The Other ◽  
Mos Transistors ◽  
Major Focus ◽  
Mos Devices ◽  
Gate Oxide Thickness

ABSTRACTThe effects of ionizing radiation on MOS transistors with gate oxide thickness up to 2 μm have been investigated. The major focus of workers in this area has been on the hardening techniques of technologies. On the other side, our goal is to use MOS devices to reach higher sensitivities in order to detect small amounts of dose. Therefore, sensitivity as well as temperature response in the mil-std range and stability of the dosimeters have been studied.

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