Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide

1990 ◽  
Vol 37 (3) ◽  
pp. 708-717 ◽  
Author(s):  
M. Bourcerie ◽  
B.S. Doyle ◽  
J.-C. Marchetaux ◽  
J.-C. Soret ◽  
A. Boudou
Keyword(s):  
Gate Oxide ◽  
Interfacial Region ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Oxide Traps

Hydrogen/Deuterium Interaction With CMOS Transistor Device Structure: Sintering Process Studied by Sims

1998 ◽  
Vol 513 ◽  
Author(s):  
P. J. Chen ◽  
R. M. Wallace
Keyword(s):  
Interfacial Region ◽  
Sintering Process ◽  
Dangling Bond ◽  
Mos Transistors ◽  
Hot Carriers ◽  
Device Structure ◽  
Hot Carrier ◽  
Cmos Transistor ◽  
Hydrogen Deuterium

ABSTRACTPassivation of the SiO2-Si interface by hydrogen/deuterium in MOS transistors serve to ensure their operating reliability against channel hot carriers. Physical characterization of device sintering process in deuterated forming gas (10%D2:90%N2) is carried out by dynamic SIMS on planar CMOS gate stack structures, in conjunction with device hot carrier electrical testing. It is found that incorporation of deuterium in the doped poly-Si/SiO2/Si interfacial region readily occurs under typical post-metallization sintering conditions, demonstrating that transport of deuterium through CMOS gate is an effective pathway in an encapsulated device structure with silicon nitride sidewalls. The measured Si-D areal densities in the interfacial region depend on gate poly-Si doping type, but in both cases, appear to be sufficient to achieve complete interface Si dangling bond (˜1012 cm−2) passivation for the SiO2-Si system.

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 387-389 ◽  
Author(s):  
Gabriela A. Rodriguez-Ruiz ◽  
Edmundo A. Gutierrez-Dominguez ◽  
Arturo Sarmiento-Reyes ◽  
Zlatan Stanojevic ◽  
Hans Kosina ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Simulation Results ◽  
Gate Oxide Tunneling

scholarly journals Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1657-1663 ◽  
Author(s):  
J.M. Rafí ◽  
E. Simoen ◽  
K. Hayama ◽  
A. Mercha ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Floating Body ◽  
Hot Carrier ◽  
Thin Gate Oxide

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

2018 ◽  
Vol 33 (12) ◽  
pp. 125019
Author(s):  
Yen-Lin Tsai ◽  
Jone F Chen ◽  
Shang-Feng Shen ◽  
Hao-Tang Hsu ◽  
Chia-Yu Kao ◽  
...  
Keyword(s):  
High Voltage ◽  
Drift Region ◽  
Mos Transistors ◽  
Hot Carrier

Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide

2009 ◽  
Vol 26 (1) ◽  
pp. 017304 ◽  
Author(s):  
Hu Shi-Gang ◽  
Hao Yue ◽  
Ma Xiao-Hua ◽  
Cao Yan-Rong ◽  
Chen Chi ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Hot Carrier ◽  
Stress Effects ◽  
Hot Carrier Stress ◽  
Thin Gate Oxide

An advanced description of oxide traps in MOS transistors and its relation to DFT

2010 ◽  
Vol 9 (3-4) ◽  
pp. 135-140 ◽  
Author(s):  
F. Schanovsky ◽  
W. Gös ◽  
T. Grasser
Keyword(s):  
Mos Transistors ◽  
Oxide Traps
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