High‐frequency characteristics of L g = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al 2 O 3 gate insulator

2016 ◽  
Vol 52 (10) ◽  
pp. 870-872 ◽  
Author(s):  
T.‐W. Kim ◽  
J.S. Kim ◽  
D.‐K. Kim ◽  
S.H. Shin ◽  
W.‐S. Park ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistor ◽  
Frequency Characteristics ◽  
Gate Insulator ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Mos

scholarly journals Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 970
Author(s):  
Yuan-Ming Chen ◽  
Hsien-Cheng Lin ◽  
Kuan-Wei Lee ◽  
Yeong-Her Wang
Keyword(s):  
Liquid Phase ◽  
Current Density ◽  
Electron Mobility ◽  
Surface States ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Mos

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN

2020 ◽  
Vol 20 (8) ◽  
pp. 4678-4683
Author(s):  
Jun Hyeok Jung ◽  
Min Su Cho ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
Insulator Layer ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Dual Gate ◽  
Recessed Gate

In this work, we present a normally-off recessed-gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) using a TiO2/SiN dual gate-insulator. We analyzed the electrical characteristics of the proposed device and found that the dual gate-insulator device achieves higher on-state currents than the device using a SiN gate-insulator because the high-k insulator layer of the dual gate-insulator improves the gate-controllability. The device using a TiO2/SiN gate-insulator shows better gate leakage current characteristics than the device with only TiO2 gate-insulator because of the high quality SiN gate-insulator. Therefore, the device using a dual gate-insulator can overcome disadvantages of a device using only TiO2 gate-insulator. To better predict the power consumption and the switching speed, we simulated the specific on-resistance (Ron, sp) according to the gate-to-drain distance (LGD) using the two-dimensional ATLAS simulator. The proposed device exhibits a threshold voltage of 2.3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm2, and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO2/SiN dual gate-insulator is a promising candidate for power electronic applications.

scholarly journals AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

2021 ◽  
Author(s):  
Paula Palacios ◽  
Muh‐Dey Wei ◽  
Thorsten Zweipfennig ◽  
Ahmed Hamed ◽  
Carsten Beckmann ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Oscillator

Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures

2021 ◽  
Vol 13 (2) ◽  
pp. 289-293
Author(s):  
Jung-Hui Tsai ◽  
Jing-Shiuan Niu ◽  
Xin-Yi Huang ◽  
Wen-Chau Liu
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Comparative Investigation ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Radio Frequency Sputtering ◽  
Transistor Mos

In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

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