High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications

2002 ◽  
Vol 20 (3) ◽  
pp. 1209 ◽  
Author(s):  
W. E. Hoke ◽  
R. E. Leoni ◽  
C. S. Whelan ◽  
P. F. Marsh ◽  
J. H. Jang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Frequency ◽  
Fiber Optic ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Fiber Optic Communications ◽  
Transimpedance Amplifiers ◽  
High Electron Mobility

scholarly journals AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

2021 ◽  
Author(s):  
Paula Palacios ◽  
Muh‐Dey Wei ◽  
Thorsten Zweipfennig ◽  
Ahmed Hamed ◽  
Carsten Beckmann ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Oscillator

scholarly journals DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application

2020 ◽  
Vol 10 (2) ◽  
pp. 1248
Author(s):  
Amin Boursali ◽  
Ahlam Guen-Bouazza ◽  
Choukria Sayah
Keyword(s):  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Inp Substrate ◽  
Rf Performance ◽  
20 Nm ◽  
Tcad Simulations

lnAlAs/lnGaAs/InP high electron mobility transistor (HEMT) offers excellent high frequency operation.In this work,the DC and RF performance of a 20 nm gate length enhancement mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) on InP substrate are presented.The SILVACO-TCAD simulations performed at room temperature using the appropriate model sshowed that the studied device exhibit excellent pinch-off characteristics, with a maximum transconductance of 1100ms/mm, a threshold voltage of 0,62V, and an Ion/Ioff ratio of 2.106. The cut-off frequency and maximum frequency of oscillation are 980 GHz and 1.3THz respectively. These promising results allow us to affirm that this device is intended to be used in high frequency applications.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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