scholarly journals AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

2021 ◽  
Author(s):  
Paula Palacios ◽  
Muh‐Dey Wei ◽  
Thorsten Zweipfennig ◽  
Ahmed Hamed ◽  
Carsten Beckmann ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Oscillator

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

2018 ◽  
Vol 11 (9) ◽  
pp. 094101 ◽  
Author(s):  
Yachao Zhang ◽  
Tao Zhang ◽  
Hong Zhou ◽  
Yao Li ◽  
Shengrui Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Performance

High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor

2000 ◽  
Vol 39 (Part 2, No. 10B) ◽  
pp. L1029-L1031 ◽  
Author(s):  
Ching-Sung Lee ◽  
Wei-Chou Hsu ◽  
Yen-Wei Chen ◽  
Yung-Cha Chen ◽  
Hir-Ming Shieh
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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