Hot-carrier degradation mechanism for p-type symmetric LDMOS transistor with thick gate oxide

2012 ◽  
Vol 48 (24) ◽  
pp. 1545-1546 ◽  
Author(s):  
Siyang Liu ◽  
Qinsong Qian ◽  
Weijun Wan ◽  
Tingting Huang ◽  
Weifeng Sun
Keyword(s):  
Degradation Mechanism ◽  
Gate Oxide ◽  
Hot Carrier ◽  
P Type ◽  
Hot Carrier Degradation

Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure

2000 ◽  
Vol 21 (3) ◽  
pp. 130-132 ◽  
Author(s):  
Jeffrey Mun Pun Yue ◽  
Wai Kin Chim ◽  
Byung Jin Cho ◽  
Daniel Sin Hung Chan ◽  
Wei Han Qin ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Hot Carrier ◽  
Wide Channel ◽  
Hot Carrier Degradation

Characterization of hot carrier degradation within the gate oxide of short channel MOSFET's

1991 ◽  
Vol 74 (5) ◽  
pp. 379-387
Author(s):  
R. Mahnkopf ◽  
G. Przyrembel ◽  
H. G. Wagemann
Keyword(s):  
Gate Oxide ◽  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

2007 ◽  
Vol 16 (3) ◽  
pp. 821-825
Author(s):  
Chen Hai-Feng ◽  
Hao Yue ◽  
Ma Xiao-Hua ◽  
Li Kang ◽  
Ni Jin-Yu
Keyword(s):  
Gate Voltage ◽  
Gate Oxide ◽  
Gate Length ◽  
Hot Carrier ◽  
Voltage Stress ◽  
Thin Gate Oxide ◽  
Hot Carrier Degradation

scholarly journals Characterization of hot carrier degradation within the gate oxide of short channel MOSFET's

1991 ◽  
Vol 75 (1) ◽  
pp. 8-8
Author(s):  
Beitrag R. Mahnkopf ◽  
G. Przyrembel ◽  
H. G. Wagemann
Keyword(s):  
Gate Oxide ◽  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Degradation
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