Switching of resistive memory behavior from binary to ternary logic via subtle polymer donor and molecular acceptors design

2021 ◽  
Author(s):  
Saihu Pan ◽  
Zhiqiang Zhu ◽  
Hang Yu ◽  
Weixia LAN ◽  
Bin Wei ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Organic Materials ◽  
Resistive Memory ◽  
Ternary Logic ◽  
Resistive Switching Memory ◽  
Switching Memory

Emerging organic resistive switching memory (ORSM) devices in which active organic materials possess at least two stable resistance states have attracted considerable attention for their intriguing nonvolatile memory properties. Here,...

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

2015 ◽  
Vol 17 (44) ◽  
pp. 29978-29984 ◽  
Author(s):  
Yanmei Sun ◽  
Fengjuan Miao ◽  
Rui Li ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Electrical Conductance ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Nonvolatile Memory Devices ◽  
Vinyl Phenol ◽  
Switching Memory

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated.

Resistive switching behaviour in a polymannose film for multistate non-volatile memory application

2021 ◽  
Author(s):  
Ilias A. Tayeb ◽  
Feng Zhao ◽  
Jafri M. Abdullah ◽  
Kuan Y. Cheong
Keyword(s):  
Environmental Impacts ◽  
Resistive Switching ◽  
Organic Materials ◽  
Electronic Waste ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives to produce resistive switching memory due to their biodegradability and benign environmental impacts.

Anti-oxidative passivation and electrochemical activation of black phosphorus via covalent functionalization and its nonvolatile memory application

2020 ◽  
Vol 8 (22) ◽  
pp. 7309-7313
Author(s):  
Weilin Chen ◽  
Shuang Gao ◽  
Zhuolin Xie ◽  
Ying Lu ◽  
Guodong Gong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Covalent Modification ◽  
Black Phosphorus ◽  
Electrochemical Activity ◽  
Electrochemical Activation ◽  
Covalent Functionalization ◽  
Resistive Switching Memory ◽  
Potential Use ◽  
Switching Memory

Covalent modification of BP nanosheets with triphenylamine molecules results in better air stability and electrochemical activity, thus enabling its potential use for nonvolatile resistive switching memory.

Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

2012 ◽  
Vol 1430 ◽  
Author(s):  
Atsushi Tsurumaki-Fukuchi ◽  
Hiroyuki Yamada ◽  
Akihito Sawa
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zero Crossing ◽  
Resistive Switching Memory ◽  
Low Resistance ◽  
Current Voltage ◽  
Bipolar Type ◽  
Switching Characteristics ◽  
Switching Memory ◽  
Resistive Switching Effect

ABSTRACTWe have fabricated a ferroelectric resistive switching device of Pt/Bi1-δFeO3 (BFO)/SrRuO3 (SRO) in which the conductivity of BFO layer was controlled by changing the Bi-deficiency concentration. The devices showed a bipolar-type resistive switching effect, i.e., zero-crossing hysteretic current–voltage (I–V) characteristics. In addition, the I–V characteristics in both high and low resistance states are nonlinear, which can avoid a read-error problem in a passive crossbar memory array. Resistive switching characteristics measured in pulse-voltage mode revealed that the resistance values in low resistance states vary with the amplitude and duration time of the pulsed-voltage stresses, indicating possibility of multilevel switching. On the basis of the experimental results, we discuss the potential of the Pt/BFO/SRO device for application in a large-capacity nonvolatile memory.

SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices

2015 ◽  
Vol 1790 ◽  
pp. 7-12 ◽  
Author(s):  
Karsten Fleck ◽  
Ulrich Böttger ◽  
Rainer Waser ◽  
Stephan Menzel
Keyword(s):  
Resistive Switching ◽  
Joule Heating ◽  
Resistive State ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Precise Analysis ◽  
Kinetics Of ◽  
Switching Memory ◽  
High Resistive State

ABSTRACTIn this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.

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