Anti-oxidative passivation and electrochemical activation of black phosphorus via covalent functionalization and its nonvolatile memory application

2020 ◽  
Vol 8 (22) ◽  
pp. 7309-7313
Author(s):  
Weilin Chen ◽  
Shuang Gao ◽  
Zhuolin Xie ◽  
Ying Lu ◽  
Guodong Gong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Covalent Modification ◽  
Black Phosphorus ◽  
Electrochemical Activity ◽  
Electrochemical Activation ◽  
Covalent Functionalization ◽  
Resistive Switching Memory ◽  
Potential Use ◽  
Switching Memory

Covalent modification of BP nanosheets with triphenylamine molecules results in better air stability and electrochemical activity, thus enabling its potential use for nonvolatile resistive switching memory.

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

2015 ◽  
Vol 17 (44) ◽  
pp. 29978-29984 ◽  
Author(s):  
Yanmei Sun ◽  
Fengjuan Miao ◽  
Rui Li ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Electrical Conductance ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Nonvolatile Memory Devices ◽  
Vinyl Phenol ◽  
Switching Memory

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated.

Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

2012 ◽  
Vol 1430 ◽  
Author(s):  
Atsushi Tsurumaki-Fukuchi ◽  
Hiroyuki Yamada ◽  
Akihito Sawa
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zero Crossing ◽  
Resistive Switching Memory ◽  
Low Resistance ◽  
Current Voltage ◽  
Bipolar Type ◽  
Switching Characteristics ◽  
Switching Memory ◽  
Resistive Switching Effect

ABSTRACTWe have fabricated a ferroelectric resistive switching device of Pt/Bi1-δFeO3 (BFO)/SrRuO3 (SRO) in which the conductivity of BFO layer was controlled by changing the Bi-deficiency concentration. The devices showed a bipolar-type resistive switching effect, i.e., zero-crossing hysteretic current–voltage (I–V) characteristics. In addition, the I–V characteristics in both high and low resistance states are nonlinear, which can avoid a read-error problem in a passive crossbar memory array. Resistive switching characteristics measured in pulse-voltage mode revealed that the resistance values in low resistance states vary with the amplitude and duration time of the pulsed-voltage stresses, indicating possibility of multilevel switching. On the basis of the experimental results, we discuss the potential of the Pt/BFO/SRO device for application in a large-capacity nonvolatile memory.

Switching of resistive memory behavior from binary to ternary logic via subtle polymer donor and molecular acceptors design

2021 ◽  
Author(s):  
Saihu Pan ◽  
Zhiqiang Zhu ◽  
Hang Yu ◽  
Weixia LAN ◽  
Bin Wei ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Organic Materials ◽  
Resistive Memory ◽  
Ternary Logic ◽  
Resistive Switching Memory ◽  
Switching Memory

Emerging organic resistive switching memory (ORSM) devices in which active organic materials possess at least two stable resistance states have attracted considerable attention for their intriguing nonvolatile memory properties. Here,...

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory
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