SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices

2015 ◽  
Vol 1790 ◽  
pp. 7-12 ◽  
Author(s):  
Karsten Fleck ◽  
Ulrich Böttger ◽  
Rainer Waser ◽  
Stephan Menzel
Keyword(s):  
Resistive Switching ◽  
Joule Heating ◽  
Resistive State ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Precise Analysis ◽  
Kinetics Of ◽  
Switching Memory ◽  
High Resistive State

ABSTRACTIn this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

2019 ◽  
Vol 45 (5) ◽  
pp. 5724-5730 ◽  
Author(s):  
Huaizu Cai ◽  
Meimei Lao ◽  
Jun Xu ◽  
Yukai Chen ◽  
Chujie Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Switching Memory

Top-Down Synthesis of Hollow Graphene Nanostructures for Use in Resistive Switching Memory Devices

2017 ◽  
Vol 3 (10) ◽  
pp. 1700264 ◽  
Author(s):  
Gopinathan Anoop ◽  
Tae Yeon Kim ◽  
Hye Jeong Lee ◽  
Varij Panwar ◽  
Jeong Hun Kwak ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Top Down ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Graphene Nanostructures

Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28815-28819 ◽  
Author(s):  
Tzu-Tien Huang ◽  
Chia-Liang Tsai ◽  
Sheng-Huei Hsiao ◽  
Guey-Sheng Liou
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Linkage Effect ◽  
Donor Acceptor ◽  
Switching Memory

In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.

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