high resistive state
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Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory

2020 ◽  
Vol 41 (2) ◽  
pp. 224-227 ◽  
Author(s):  
Kuan-Ju Zhou ◽  
Ting-Chang Chang ◽  
Chih-Yang Lin ◽  
Chun-Kuei Chen ◽  
Yi-Ting Tseng ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistive State ◽  
Access Memory ◽  
High Resistive State ◽  
Current Mechanism

Charge transport mechanism of high-resistive state in RRAM based on SiOx

2019 ◽  
Vol 114 (3) ◽  
pp. 033503 ◽  
Author(s):  
A. A. Gismatulin ◽  
V. N. Kruchinin ◽  
V. A. Gritsenko ◽  
I. P. Prosvirin ◽  
T.-J. Yen ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Mechanism ◽  
Resistive State ◽  
Charge Transport Mechanism ◽  
High Resistive State

scholarly journals A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State

2015 ◽  
Vol 62 (8) ◽  
pp. 2606-2613 ◽  
Author(s):  
Francesco Maria Puglisi ◽  
Luca Larcher ◽  
Andrea Padovani ◽  
Paolo Pavan
Keyword(s):  
Statistical Investigation ◽  
Resistive State ◽  
High Resistive State

SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices

2015 ◽  
Vol 1790 ◽  
pp. 7-12 ◽  
Author(s):  
Karsten Fleck ◽  
Ulrich Böttger ◽  
Rainer Waser ◽  
Stephan Menzel
Keyword(s):  
Resistive Switching ◽  
Joule Heating ◽  
Resistive State ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Precise Analysis ◽  
Kinetics Of ◽  
Switching Memory ◽  
High Resistive State

ABSTRACTIn this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.

RTS noise characterization of HfOx RRAM in high resistive state

2013 ◽  
Vol 84 ◽  
pp. 160-166 ◽  
Author(s):  
Francesco M. Puglisi ◽  
Paolo Pavan ◽  
Andrea Padovani ◽  
Luca Larcher ◽  
Gennadi Bersuker
Keyword(s):  
Resistive State ◽  
Noise Characterization ◽  
Rts Noise ◽  
High Resistive State
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