Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

2012 ◽  
Vol 1430 ◽  
Author(s):  
Atsushi Tsurumaki-Fukuchi ◽  
Hiroyuki Yamada ◽  
Akihito Sawa
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zero Crossing ◽  
Resistive Switching Memory ◽  
Low Resistance ◽  
Current Voltage ◽  
Bipolar Type ◽  
Switching Characteristics ◽  
Switching Memory ◽  
Resistive Switching Effect

ABSTRACTWe have fabricated a ferroelectric resistive switching device of Pt/Bi1-δFeO3 (BFO)/SrRuO3 (SRO) in which the conductivity of BFO layer was controlled by changing the Bi-deficiency concentration. The devices showed a bipolar-type resistive switching effect, i.e., zero-crossing hysteretic current–voltage (I–V) characteristics. In addition, the I–V characteristics in both high and low resistance states are nonlinear, which can avoid a read-error problem in a passive crossbar memory array. Resistive switching characteristics measured in pulse-voltage mode revealed that the resistance values in low resistance states vary with the amplitude and duration time of the pulsed-voltage stresses, indicating possibility of multilevel switching. On the basis of the experimental results, we discuss the potential of the Pt/BFO/SRO device for application in a large-capacity nonvolatile memory.

scholarly journals Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Memory Device ◽  
Comparison Study ◽  
Tio2 Layer ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Improved Stability ◽  
Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type

scholarly journals Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications

RSC Advances ◽  
2020 ◽  
Vol 10 (52) ◽  
pp. 31342-31347
Author(s):  
Sobia Ali Khan ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Voltage Amplitude ◽  
Resistive Switching Memory ◽  
Sweep Voltage ◽  
Switching Characteristics ◽  
Switching Memory

Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

2015 ◽  
Vol 17 (44) ◽  
pp. 29978-29984 ◽  
Author(s):  
Yanmei Sun ◽  
Fengjuan Miao ◽  
Rui Li ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Electrical Conductance ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Nonvolatile Memory Devices ◽  
Vinyl Phenol ◽  
Switching Memory

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated.

Nonvolatile resistive switching characteristics of HfO2 with Cu doping

2008 ◽  
Vol 1071 ◽  
Author(s):  
Weihua Guan ◽  
Shibing Long ◽  
Ming Liu ◽  
Wei Wang
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Nonvolatile Memory ◽  
Metal Electrode ◽  
Electron Beam Evaporation ◽  
Switching Behavior ◽  
Cu Doping ◽  
Low Resistance ◽  
Switching Characteristics ◽  
Memory Applications

AbstractIn this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is less than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

scholarly journals Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory

AIP Advances ◽  
2014 ◽  
Vol 4 (8) ◽  
pp. 087110 ◽  
Author(s):  
Shintaro Otsuka ◽  
Tomohiro Shimizu ◽  
Shoso Shingubara ◽  
Katsunori Makihara ◽  
Seiichi Miyazaki ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Switching Memory

Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure

2017 ◽  
Vol 19 (38) ◽  
pp. 25938-25948 ◽  
Author(s):  
Somsubhra Chakrabarti ◽  
Siddheswar Maikap ◽  
Subhranu Samanta ◽  
Surajit Jana ◽  
Anisha Roy ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Glucose Sensing ◽  
Glucose Detection ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
First Time ◽  
Switching Memory

The resistive switching characteristics of a scalable IrOx/Al2O3/W cross-point structure and its mechanism for pH/H2O2 sensing along with glucose detection have been investigated for the first time.

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