New insights about boron species in acidic digestion solutions of boron doped silicon

2021 ◽  
Author(s):  
Anja Rietig ◽  
Hans-Joachim Grafe ◽  
Jörg Acker
Keyword(s):  
Boron Concentration ◽  
Systematic Investigation ◽  
Precise Determination ◽  
Boron Doped ◽  
Doped Silicon

The exact and precise determination of the boron concentration in silicon is still a challenge. A systematic investigation dealing with digenstions of 60 silicion samples with HF-HNO3 an subsequent boron...

Determination of Boron Concentration in Doped Diamond Films

2011 ◽  
Vol 1282 ◽  
Author(s):  
S.N. Demlow ◽  
T.A. Grotjohn ◽  
T. Hogan ◽  
M. Becker ◽  
J. Asmussen
Keyword(s):  
Boron Concentration ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
Dopant Activation ◽  
Boron Doped ◽  
Boron Dopant ◽  
Boron Acceptor

ABSTRACTThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Extraction of Elastic Parameters of Heavily Boron-Doped Silicon Layer by Elimination of Misfit Dislocations

1995 ◽  
Vol 378 ◽  
Author(s):  
HO-JUN Lee ◽  
Chul-Hi Han ◽  
Choong-Ki Kim
Keyword(s):  
Young’S Modulus ◽  
Boron Concentration ◽  
Young's Modulus ◽  
Silicon Layer ◽  
Misfit Dislocations ◽  
Residual Tensile Stress ◽  
X Ray Diffraction ◽  
Elastic Parameters ◽  
Boron Doped ◽  
Doped Silicon

AbstractIn this paper, various elastic parameters of heavily boron-doped silicon layer have been extracted by eliminating the misfit dislocations in the layer. The dislocation-free silicon membranes doped with the boron concentration of 1.3 × 1020 atoms/cm3 have been fabricated and the Young’s modulus of 1.45 × 1012 dyn/cm2 and residual tensile stress of 2.7 × 109 dyn/cm2 have been extracted by blister method. From the Young’s modulus and residual stress, the residual tensile strain of 1.34 × 10−3, lattice constant of 5.424 Å, and misfit coefficient of 1.03 × 10−23 cm3/atom have been calculated. These parameters are very similar to those obtained from X-ray diffraction analysis and theory.

Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range

2010 ◽  
Vol 43 (1-2) ◽  
pp. 137-140 ◽  
Author(s):  
Jean-Claude Dupuy ◽  
Christiane Dubois ◽  
Gilles Prudon ◽  
Brice Gautier ◽  
Reinhard Kögler ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Comparative Method ◽  
Boron Doped ◽  
Doped Silicon ◽  
Ion Yields

Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon From Low Temperature Microphotoluminescence Spectroscopy

2017 ◽  
Vol 7 (6) ◽  
pp. 1693-1700 ◽  
Author(s):  
Young-Joon Han ◽  
Evan Franklin ◽  
Daniel Macdonald ◽  
Hieu T. Nguyen ◽  
Di Yan
Keyword(s):  
Low Temperature ◽  
Density Profiles ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals A Highly Sensitive Determination of Bulk Cu and Ni in Heavily Boron-doped Silicon Wafers

2011 ◽  
Vol 32 (7) ◽  
pp. 2227-2232 ◽  
Author(s):  
Sung-Wook Lee ◽  
Sang-Hak Lee ◽  
Young-Hoon Kim ◽  
Ja-Young Kim ◽  
Don-Ha Hwang ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
Boron Doped ◽  
Highly Sensitive ◽  
Doped Silicon ◽  
Sensitive Determination

Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

1998 ◽  
Vol 540 ◽  
Author(s):  
V.P. Popov ◽  
V.F. Stas ◽  
I.V. Antonova
Keyword(s):  
Structural Properties ◽  
Boron Concentration ◽  
Local Stress ◽  
Gas Pressure ◽  
Boron Doped ◽  
Doped Silicon ◽  
High Boron

AbstractThe present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.

Determination of the lattice contraction of boron‐doped silicon

1993 ◽  
Vol 73 (1) ◽  
pp. 103-111 ◽  
Author(s):  
H. Holloway ◽  
S. L. McCarthy
Keyword(s):  
Lattice Contraction ◽  
Boron Doped ◽  
Doped Silicon
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