Determination of the lattice contraction of boron‐doped silicon

1993 ◽  
Vol 73 (1) ◽  
pp. 103-111 ◽  
Author(s):  
H. Holloway ◽  
S. L. McCarthy
Keyword(s):  
Lattice Contraction ◽  
Boron Doped ◽  
Doped Silicon

New insights about boron species in acidic digestion solutions of boron doped silicon

2021 ◽  
Author(s):  
Anja Rietig ◽  
Hans-Joachim Grafe ◽  
Jörg Acker
Keyword(s):  
Boron Concentration ◽  
Systematic Investigation ◽  
Precise Determination ◽  
Boron Doped ◽  
Doped Silicon

The exact and precise determination of the boron concentration in silicon is still a challenge. A systematic investigation dealing with digenstions of 60 silicion samples with HF-HNO3 an subsequent boron...

Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range

2010 ◽  
Vol 43 (1-2) ◽  
pp. 137-140 ◽  
Author(s):  
Jean-Claude Dupuy ◽  
Christiane Dubois ◽  
Gilles Prudon ◽  
Brice Gautier ◽  
Reinhard Kögler ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Comparative Method ◽  
Boron Doped ◽  
Doped Silicon ◽  
Ion Yields

Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon From Low Temperature Microphotoluminescence Spectroscopy

2017 ◽  
Vol 7 (6) ◽  
pp. 1693-1700 ◽  
Author(s):  
Young-Joon Han ◽  
Evan Franklin ◽  
Daniel Macdonald ◽  
Hieu T. Nguyen ◽  
Di Yan
Keyword(s):  
Low Temperature ◽  
Density Profiles ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals A Highly Sensitive Determination of Bulk Cu and Ni in Heavily Boron-doped Silicon Wafers

2011 ◽  
Vol 32 (7) ◽  
pp. 2227-2232 ◽  
Author(s):  
Sung-Wook Lee ◽  
Sang-Hak Lee ◽  
Young-Hoon Kim ◽  
Ja-Young Kim ◽  
Don-Ha Hwang ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
Boron Doped ◽  
Highly Sensitive ◽  
Doped Silicon ◽  
Sensitive Determination

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Simultaneous Square-Wave Voltammetric Determination of Paracetamol, Caffeine and Orphenadrine in Pharmaceutical Formulations Using a Cathodically Pretreated Boron-Doped Diamond Electrode

2013 ◽  
Vol 25 (7) ◽  
pp. 1734-1741 ◽  
Author(s):  
Ana Paula Pires Eisele ◽  
Débora Nóbile Clausen ◽  
César Ricardo Teixeira Tarley ◽  
Luiz Henrique Dall'Antonia ◽  
Elen Romão Sartori
Keyword(s):  
Pharmaceutical Formulations ◽  
Voltammetric Determination ◽  
Boron Doped Diamond ◽  
Square Wave ◽  
Diamond Electrode ◽  
Boron Doped ◽  
Boron Doped Diamond Electrode
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