Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range

2010 ◽  
Vol 43 (1-2) ◽  
pp. 137-140 ◽  
Author(s):  
Jean-Claude Dupuy ◽  
Christiane Dubois ◽  
Gilles Prudon ◽  
Brice Gautier ◽  
Reinhard Kögler ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Comparative Method ◽  
Boron Doped ◽  
Doped Silicon ◽  
Ion Yields

Rapid Electroanalytical Method for Determination of Nebivolol at a Boron-Doped Diamond Electrode

2015 ◽  
Vol 98 (6) ◽  
pp. 1535-1541 ◽  
Author(s):  
Biljana Nigović ◽  
Ana Mornar ◽  
Mario Završki
Keyword(s):  
High Speed ◽  
Comparative Method ◽  
Potential Range ◽  
Boron Doped Diamond ◽  
Buffer Solution ◽  
Diamond Electrode ◽  
Boron Doped ◽  
Boron Doped Diamond Electrode ◽  
Electroanalytical Method

Abstract A boron-doped diamond electrode provided a sensitive and cost-effective sensing platform for detection and quantitative determination of novel beta(1)-adrenergic receptor antagonist nebivolol. The net square-wave voltammetric response at 1.31 V related to the oxidation of nebivolol was obtained in Britton-Robinson buffer solution at pH 8. It increased linearly with the drug concentration in the range of 2.5 × 10–7 to 1.5 × 10–5 M. The LOD attained was 3.2 × 10–8 M. The practical analytical approach was illustrated by high speed quantification of nebivolol in a commercial pharmaceutical formulation. The RP-HPLC was selected as a comparative method for evaluating the proposed electroanalytical method. The newly developed method at the unmodified electrode surface was faster and simpler in comparison with HPLC (the retention time was 17.6 min), and only 6 s was necessary for direct voltammetric measurement in the potential range from 0.5 to 1.7 V with a 2 mV potential step and pulse frequency of 100 Hz.

New insights about boron species in acidic digestion solutions of boron doped silicon

2021 ◽  
Author(s):  
Anja Rietig ◽  
Hans-Joachim Grafe ◽  
Jörg Acker
Keyword(s):  
Boron Concentration ◽  
Systematic Investigation ◽  
Precise Determination ◽  
Boron Doped ◽  
Doped Silicon

The exact and precise determination of the boron concentration in silicon is still a challenge. A systematic investigation dealing with digenstions of 60 silicion samples with HF-HNO3 an subsequent boron...

Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at%

2012 ◽  
Vol 45 (1) ◽  
pp. 369-372
Author(s):  
J. C. Dupuy ◽  
G. Prudon ◽  
C. Dubois ◽  
R. Kögler ◽  
S. Akhmadaliev ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Comparative Method ◽  
Self Consistent ◽  
Ion Yields ◽  
Secondary Ion

Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon From Low Temperature Microphotoluminescence Spectroscopy

2017 ◽  
Vol 7 (6) ◽  
pp. 1693-1700 ◽  
Author(s):  
Young-Joon Han ◽  
Evan Franklin ◽  
Daniel Macdonald ◽  
Hieu T. Nguyen ◽  
Di Yan
Keyword(s):  
Low Temperature ◽  
Density Profiles ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals A Highly Sensitive Determination of Bulk Cu and Ni in Heavily Boron-doped Silicon Wafers

2011 ◽  
Vol 32 (7) ◽  
pp. 2227-2232 ◽  
Author(s):  
Sung-Wook Lee ◽  
Sang-Hak Lee ◽  
Young-Hoon Kim ◽  
Ja-Young Kim ◽  
Don-Ha Hwang ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
Boron Doped ◽  
Highly Sensitive ◽  
Doped Silicon ◽  
Sensitive Determination

Determination of the lattice contraction of boron‐doped silicon

1993 ◽  
Vol 73 (1) ◽  
pp. 103-111 ◽  
Author(s):  
H. Holloway ◽  
S. L. McCarthy
Keyword(s):  
Lattice Contraction ◽  
Boron Doped ◽  
Doped Silicon
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