A first principles study of p-type doping in two dimensional GaN

2021 ◽  
Vol 23 (37) ◽  
pp. 20901-20908
Author(s):  
Hongfu Huang ◽  
Junhao Peng ◽  
Huafeng Dong ◽  
Le Huang ◽  
Minru Wen ◽  
...  
Keyword(s):  
First Principles ◽  
Calculation Model ◽  
Wide Bandgap ◽  
Two Dimensional ◽  
Wide Bandgap Semiconductors ◽  
First Principles Study ◽  
Bandgap Semiconductors ◽  
P Type

We exploited the two-dimensional graphene-like GaN monolayer by a new calculation model to verify the doping limit rules for explaining the doping bottleneck in wide bandgap semiconductors.

scholarly journals Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1972 ◽  
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
High Speed ◽  
Semiconductor Devices ◽  
Data Communication ◽  
Wide Bandgap ◽  
Light Sources ◽  
Wide Bandgap Semiconductors ◽  
Wide Bandgap Semiconductor ◽  
Wide Range ◽  
Bandgap Semiconductors ◽  
P Type

Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors.

scholarly journals A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

Science ◽  
2019 ◽  
Vol 365 (6460) ◽  
pp. 1454-1457 ◽  
Author(s):  
Reet Chaudhuri ◽  
Samuel James Bader ◽  
Zhen Chen ◽  
David A. Muller ◽  
Huili Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Quantum Wells ◽  
Electron Gas ◽  
Wide Bandgap ◽  
Two Dimensional ◽  
Cryogenic Temperatures ◽  
Nitride Semiconductors ◽  
Valence Band Structure ◽  
Bandgap Semiconductors ◽  
P Type

A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The observed results provide a probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces.

Highly polarization-sensitive, visible-blind and self-powered ultraviolet photodetection based on two-dimensional wide bandgap semiconductors: a theoretical prediction

2019 ◽  
Vol 7 (48) ◽  
pp. 27503-27513 ◽  
Author(s):  
Yongzhi Luo ◽  
Yibin Hu ◽  
Yiqun Xie
Keyword(s):  
Theoretical Prediction ◽  
Extinction Ratio ◽  
Wide Bandgap ◽  
Two Dimensional ◽  
Wide Bandgap Semiconductors ◽  
Photogalvanic Effect ◽  
Self Powered ◽  
Bandgap Semiconductors ◽  
Visible Blind

A self-powered, visible-blind and ultraviolet polarized photodetector driven by the photogalvanic effect based on MgBr2/CdCl2 heterostructure war proposed, showing an extinction ratio of up to 280.

Penta-P2X (X=C, Si) monolayers as wide-bandgap semiconductors: A first principles prediction

2018 ◽  
Vol 13 (3) ◽  
Author(s):  
Mosayeb Naseri ◽  
Shiru Lin ◽  
Jaafar Jalilian ◽  
Jinxing Gu ◽  
Zhongfang Chen
Keyword(s):  
First Principles ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors

First-principles study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB35 ◽  
Author(s):  
Tomoe Yayama ◽  
Anh Khoa Augustin Lu ◽  
Tetsuya Morishita ◽  
Takeshi Nakanishi
Keyword(s):  
Temperature Effect ◽  
Electronic Properties ◽  
First Principles ◽  
Two Dimensional ◽  
First Principles Study

Small Polarons in Two-Dimensional Pnictogens: A First-Principles Study

2021 ◽  
pp. 4674-4680
Author(s):  
Vasilii Vasilchenko ◽  
Sergey Levchenko ◽  
Vasili Perebeinos ◽  
Andriy Zhugayevych
Keyword(s):  
First Principles ◽  
Two Dimensional ◽  
First Principles Study ◽  
Small Polarons
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