scholarly journals A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

Science ◽  
2019 ◽  
Vol 365 (6460) ◽  
pp. 1454-1457 ◽  
Author(s):  
Reet Chaudhuri ◽  
Samuel James Bader ◽  
Zhen Chen ◽  
David A. Muller ◽  
Huili Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Quantum Wells ◽  
Electron Gas ◽  
Wide Bandgap ◽  
Two Dimensional ◽  
Cryogenic Temperatures ◽  
Nitride Semiconductors ◽  
Valence Band Structure ◽  
Bandgap Semiconductors ◽  
P Type

A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The observed results provide a probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces.

A first principles study of p-type doping in two dimensional GaN

2021 ◽  
Vol 23 (37) ◽  
pp. 20901-20908
Author(s):  
Hongfu Huang ◽  
Junhao Peng ◽  
Huafeng Dong ◽  
Le Huang ◽  
Minru Wen ◽  
...  
Keyword(s):  
First Principles ◽  
Calculation Model ◽  
Wide Bandgap ◽  
Two Dimensional ◽  
Wide Bandgap Semiconductors ◽  
First Principles Study ◽  
Bandgap Semiconductors ◽  
P Type

We exploited the two-dimensional graphene-like GaN monolayer by a new calculation model to verify the doping limit rules for explaining the doping bottleneck in wide bandgap semiconductors.

Spin coherence of two-dimensional electron gas in CdTe/(Cd,Mg)Te quantum wells

2006 ◽  
Vol 243 (4) ◽  
pp. 878-881 ◽  
Author(s):  
E. A. Zhukov ◽  
D. R. Yakovlev ◽  
M. Bayer ◽  
G. Karczewski ◽  
T. Wojtowicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Spin Coherence ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

scholarly journals Исследование параметров двумерного электронного газа в квантовых ямах InGaN/GaN методом терагерцового плазмонного резонанса

2021 ◽  
Vol 55 (11) ◽  
pp. 1059
Author(s):  
Е.Р. Бурмистров ◽  
Л.П. Авакянц
Keyword(s):  
Quantum Wells ◽  
Terahertz Spectroscopy ◽  
Radiation Power ◽  
Electron Gas ◽  
Femtosecond Laser Pulses ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Plasmon Resonances ◽  
Dimensional Electron Gas

A new approach to determining the parameters of a two-dimensional electron gas in InGaN/GaN quantum wells is proposed. It is based on the method of terahertz spectroscopy with time resolution, within the framework of which the terahertz frequencies of two-dimensional plasmon resonances excited in the studied samples of InGaN/AlGaN/GaN heterostructures by femtosecond laser pulses at a wavelength of 797 nm were recorded. Oscillating behavior of the output terahertz radiation power with minima in the frequency range 1−5 THz is shown, which is associated with the excitation of plasmon oscillations in a two-dimensional electron gas localized in an InGaN/GaN quantum well. During the processing of terahertz spectra, the effect of renormalization of the effective mass of two-dimensional electron gas, as well as phase modulation near the frequencies of plasmon resonances with an increase in the temperature of the sample from 90 to 170 K, was found. The proposed method is non-contact and can be used in a wide temperature range.

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