Highly polarization-sensitive, visible-blind and self-powered ultraviolet photodetection based on two-dimensional wide bandgap semiconductors: a theoretical prediction

2019 ◽  
Vol 7 (48) ◽  
pp. 27503-27513 ◽  
Author(s):  
Yongzhi Luo ◽  
Yibin Hu ◽  
Yiqun Xie
Keyword(s):  
Theoretical Prediction ◽  
Extinction Ratio ◽  
Wide Bandgap ◽  
Two Dimensional ◽  
Wide Bandgap Semiconductors ◽  
Photogalvanic Effect ◽  
Self Powered ◽  
Bandgap Semiconductors ◽  
Visible Blind

A self-powered, visible-blind and ultraviolet polarized photodetector driven by the photogalvanic effect based on MgBr2/CdCl2 heterostructure war proposed, showing an extinction ratio of up to 280.

A first principles study of p-type doping in two dimensional GaN

2021 ◽  
Vol 23 (37) ◽  
pp. 20901-20908
Author(s):  
Hongfu Huang ◽  
Junhao Peng ◽  
Huafeng Dong ◽  
Le Huang ◽  
Minru Wen ◽  
...  
Keyword(s):  
First Principles ◽  
Calculation Model ◽  
Wide Bandgap ◽  
Two Dimensional ◽  
Wide Bandgap Semiconductors ◽  
First Principles Study ◽  
Bandgap Semiconductors ◽  
P Type

We exploited the two-dimensional graphene-like GaN monolayer by a new calculation model to verify the doping limit rules for explaining the doping bottleneck in wide bandgap semiconductors.

scholarly journals Wide-Bandgap Semiconductors: Nanostructures, Defects, and Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-2
Author(s):  
Meiyong Liao ◽  
Thomas Stergiopoulos ◽  
Jose Alvarez ◽  
Surojit Chattopadhyay ◽  
Guihua Zhang
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors
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