Theoretical research on p‐type doping two‐dimensional GaN based on first‐principles study

2020 ◽  
Vol 44 (7) ◽  
pp. 6058-6067 ◽  
Author(s):  
Jian Tian ◽  
Lei Liu ◽  
Feifei Lu
2021 ◽  
Vol 23 (37) ◽  
pp. 20901-20908
Author(s):  
Hongfu Huang ◽  
Junhao Peng ◽  
Huafeng Dong ◽  
Le Huang ◽  
Minru Wen ◽  
...  

We exploited the two-dimensional graphene-like GaN monolayer by a new calculation model to verify the doping limit rules for explaining the doping bottleneck in wide bandgap semiconductors.


2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB35 ◽  
Author(s):  
Tomoe Yayama ◽  
Anh Khoa Augustin Lu ◽  
Tetsuya Morishita ◽  
Takeshi Nakanishi

Author(s):  
Vasilii Vasilchenko ◽  
Sergey Levchenko ◽  
Vasili Perebeinos ◽  
Andriy Zhugayevych

2021 ◽  
Vol 103 (12) ◽  
Author(s):  
Xuhui Yang ◽  
Kevin Parrish ◽  
Yan-Ling Li ◽  
Baisheng Sa ◽  
Hongbing Zhan ◽  
...  

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