A strongly adhering ZnO crystal layer via a seed/buffer-free, low-temperature direct growth on a polyimide film via a solution process

CrystEngComm ◽  
2020 ◽  
Vol 22 (33) ◽  
pp. 5533-5538
Author(s):  
Kazuyuki Shishino ◽  
Tetsuya Yamada ◽  
Masao Arai ◽  
Munekazu Ikeda ◽  
Hajime Hirata ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solution Process ◽  
Polyimide Film ◽  
Buffer Layers ◽  
Crystal Layer ◽  
Direct Growth ◽  
Zno Crystal

We demonstrated direct growth of the ZnO crystal layer on a polyimide film without any seed/buffer layers.

Growth manner of rod-shaped ZnO crystals at low temperature without any seed/buffer layer on a polyimide film

CrystEngComm ◽  
2021 ◽  
Vol 23 (10) ◽  
pp. 2039-2047
Author(s):  
Kazuyuki Shishino ◽  
Tetsuya Yamada ◽  
Kazunori Fujisawa ◽  
Munekazu Ikeda ◽  
Hajime Hirata ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Intermediate Layer ◽  
Polyimide Film ◽  
Crystal Layer ◽  
Polyimide Substrate ◽  
Zno Crystal

Recently, we fabricated a rod-shaped ZnO crystal layer directly on a polyimide substrate without any intermediate layer. In this study, we aimed to understand its fabrication mechanism.

Low Temperature Epitaxial Growth of ZnO Layer on Sapphire by Plasma-Assisted Epitaxy

2001 ◽  
Vol 680 ◽  
Author(s):  
Satoshi Yamauchi ◽  
Takashi Hariu
Keyword(s):  
Low Temperature ◽  
Growth Condition ◽  
Free Exciton ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Crystal Nucleation ◽  
Initial Layer ◽  
Direct Growth ◽  
Zno Crystal

ABSTRACTZnO layer was epitaxially grown with a high growth rate around 800nm/hour on C-sapphire at relatively low temperature 400°C by plasma-assisted epitaxy in oxygen plasma which was excited by radio- frequency power at 13.56MHz. Photoluminescence spectra, which were dominated by strong donor-bound exciton emissions and free-exciton emissions at 10K, indicated deep levels native-defects were well prevented in the layers grown by the optimized growth condition including the power to discharge oxygen gas. Initial layers grown at very low temperature increased the probability of ZnO-crystal nucleation, compared with the direct growth on the sapphire, and were very effective in decreasing surface roughness and then improving the crystal quality of the successively grown ZnO layers. The full-width at half-maximum of donor-bound exciton emission was dependent on the initial layer growth condition and the narrowest value of the FWHM was obtained as 1.7meV on PAE-layers deposited at 400°C on the initial layer grown at 150°C.

scholarly journals Rapid Growth of TiO2 Nanoflowers via Low-Temperature Solution Process: Photovoltaic and Sensing Applications

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 566 ◽  
Author(s):  
M. Akhtar ◽  
Ahmad Umar ◽  
Swati Sood ◽  
InSung Jung ◽  
H. Hegazy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Anatase Phase ◽  
Three Dimensional ◽  
Solution Process ◽  
Dye Sensitized Solar Cell ◽  
Sensor Applications ◽  
Dye Sensitized ◽  
Sensing Applications ◽  
Density Growth ◽  
Temperature Solution

This paper reports the rapid synthesis, characterization, and photovoltaic and sensing applications of TiO2 nanoflowers prepared by a facile low-temperature solution process. The morphological characterizations clearly reveal the high-density growth of a three-dimensional flower-shaped structure composed of small petal-like rods. The detailed properties confirmed that the synthesized nanoflowers exhibited high crystallinity with anatase phase and possessed an energy bandgap of 3.2 eV. The synthesized TiO2 nanoflowers were utilized as photo-anode and electron-mediating materials to fabricate dye-sensitized solar cell (DSSC) and liquid nitroaniline sensor applications. The fabricated DSSC demonstrated a moderate conversion efficiency of ~3.64% with a maximum incident photon to current efficiency (IPCE) of ~41% at 540 nm. The fabricated liquid nitroaniline sensor demonstrated a good sensitivity of ~268.9 μA mM−1 cm−2 with a low detection limit of 1.05 mM in a short response time of 10 s.

Short-period (Si14 / Si0.75 Ge0.25)20 Superlattices for the Growth of High-quality Si0.75 Ge0.25

2003 ◽  
Vol 765 ◽  
Author(s):  
M.M. Rahman ◽  
T. Tambo ◽  
C. Tatsuyama
Keyword(s):  
Low Temperature ◽  
Alloy Layer ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Strained Layers ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Defect Sites ◽  
Short Period ◽  
Different Temperatures

AbstractIn the present experiment, we have grown 2500-Å thick Si0.75Ge0.25 alloy layers on Si(001) substrate by MBE process using a short-period (Si14/Si0.75Ge0.25)20 superlattice (SL) as buffer layers. In the SL layers, first a layer of 14 monolayers (MLs) of Si (thickness about 20Å) then a thin layer of Si0.75Ge0.25 (thickness 5-6Å) were grown. This Si/(Si0.75Ge0.25) bilayers were repeated for 20 times. The buffer layers were grown at different temperatures from 300-400°C and the alloy layers were then grown at 500°C on the buffer layers. The alloy layer showed low residual strain (about -0.16%) and smooth surface (rms roughness ~15Å) with 300°C grown SL buffer. Low temperature growth of Si in SL layer introduces point defects and low temperature growth of Si1-xGex in SL layer reduces the Ge segregation length, which leads to strained SL layer formation. Strained layers are capable to make barrier for the propagation of threading dislocations and point defect sites can trap the dislocations.

Sign in / Sign up

Export Citation Format

Share Document