Growth manner of rod-shaped ZnO crystals at low temperature without any seed/buffer layer on a polyimide film

CrystEngComm ◽  
2021 ◽  
Vol 23 (10) ◽  
pp. 2039-2047
Author(s):  
Kazuyuki Shishino ◽  
Tetsuya Yamada ◽  
Kazunori Fujisawa ◽  
Munekazu Ikeda ◽  
Hajime Hirata ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Intermediate Layer ◽  
Polyimide Film ◽  
Crystal Layer ◽  
Polyimide Substrate ◽  
Zno Crystal

Recently, we fabricated a rod-shaped ZnO crystal layer directly on a polyimide substrate without any intermediate layer. In this study, we aimed to understand its fabrication mechanism.

A strongly adhering ZnO crystal layer via a seed/buffer-free, low-temperature direct growth on a polyimide film via a solution process

CrystEngComm ◽  
2020 ◽  
Vol 22 (33) ◽  
pp. 5533-5538
Author(s):  
Kazuyuki Shishino ◽  
Tetsuya Yamada ◽  
Masao Arai ◽  
Munekazu Ikeda ◽  
Hajime Hirata ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solution Process ◽  
Polyimide Film ◽  
Buffer Layers ◽  
Crystal Layer ◽  
Direct Growth ◽  
Zno Crystal

We demonstrated direct growth of the ZnO crystal layer on a polyimide film without any seed/buffer layers.

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates

2014 ◽  
Vol 778-780 ◽  
pp. 251-254 ◽  
Author(s):  
Kazuki Meguro ◽  
Tsugutada Narita ◽  
Kaon Noto ◽  
Hideki Nakazawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Sic Films

We have formed a SiC interfacial buffer layer on AlN/Si substrates at a low temperature by low-pressure chemical vapor deposition (LPCVD) using monomethylsilane (CH3SiH3; MMS), and grew 3C-SiC films on the low-temperature buffer layer by LPCVD using MMS. We investigated the surface morphology and crystallinity of the grown SiC films. It was found that the formation of the SiC buffer layer suppressed the outdiffusion of Al and N atoms from the AlN intermediate layer to the SiC films and further improved the surface morphology and crystallinity of the films.

Study of Methods for Producing Flexible Solar Cells for Energy Supply of Emergency Source Control

2020 ◽  
Vol 1006 ◽  
pp. 267-272
Author(s):  
Nataly Deyneko
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Cadmium Telluride ◽  
Energy Supply ◽  
High Efficiency ◽  
Temperature Stability ◽  
Polyimide Film ◽  
Source Control ◽  
Polyimide Substrate ◽  
Direct Current Magnetron Sputtering

The methods of obtaining the base layers of cadmium telluride to create effective solar cells are considered. At present, two groups of methods are distinguished for the preparation of base layers of cadmium telluride for high-efficiency PECs: low-temperature and high-temperature. If a polyimide film with a temperature stability of 450 °C is used as a substrate, then deposition should be carried out at a temperature of about 430 °C. Therefore, to create base layers of cadmium telluride on a flexible polyimide substrate, it is necessary to use low-temperature methods for producing base layers. It has been established that the formation of base layers of solar cells based on cadmium telluride on flexible polyimide substrates must be carried out by direct current magnetron sputtering.

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

2015 ◽  
Vol 45 (2) ◽  
pp. 859-866 ◽  
Author(s):  
Wei-Ching Huang ◽  
Chung-Ming Chu ◽  
Chi-Feng Hsieh ◽  
Yuen-Yee Wong ◽  
Kai-wei Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Material Properties ◽  
Double Step ◽  
Nucleation Layer ◽  
Aln Buffer

Thin YBa2Cu3O7–x Films Prepared by Low Temperature Coevaporation on Si Substrates Without Buffer Layer

1990 ◽  
Vol 119 (2) ◽  
pp. K155-K158 ◽  
Author(s):  
Š. Chromik ◽  
V. Štrbík ◽  
Š. Beňačka ◽  
R. Adam ◽  
M. Jergel
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Si Substrates

Sol-Gel Coating Facilitating Si-to-Si Wafer Bonding at Low Temperature

2005 ◽  
Author(s):  
J. Wei ◽  
S. S. Deng ◽  
C. M. Tan
Keyword(s):  
Low Temperature ◽  
Bond Strength ◽  
Wafer Bonding ◽  
Intermediate Layer ◽  
Bonding Temperature ◽  
Sol Gel ◽  
Bond Quality ◽  
Bubble Generation ◽  
High Bond ◽  
High Bond Strength

Silicon-to-silicon wafer bonding by sol-gel intermediate layer has been performed using acid-catalyzed tetraethylthosilicate-ethanol-water sol solution. High bond strength near to the fracture strength of bulk silicon is obtained at low temperature, for example 100°C. However, The bond efficiency and bond strength of this intermediate layer bonding sharply decrease when the bonding temperature increases to elevated temperature, such as 300 °C. The degradation of bond quality is found to be related to the decomposition of residual organic species at elevated bonding temperature. The bubble generation and the mechanism of the high bond strength at low temperature are exploited.

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