Characterization of low-temperature grown AlSb and GaSb buffer layers

1997 ◽  
Vol 15 (4) ◽  
pp. 1187 ◽  
Author(s):  
K. G. Eyink
Keyword(s):  
Low Temperature ◽  
Buffer Layers

Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 499-503 ◽  
Author(s):  
K.K. Linder ◽  
F.C. Zhang ◽  
J.-S. Rieh ◽  
P. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Buffer Layers

Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers

2002 ◽  
Vol 237-239 ◽  
pp. 1133-1138 ◽  
Author(s):  
M. Tabuchi ◽  
H. Kyouzu ◽  
Y. Takeda ◽  
S. Yamaguchi ◽  
H. Amano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Scale ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Scale Characterization ◽  
Aln Buffer

Low temperature epitaxial growth and characterization of Ga-doped ZnO thin films on Al2O3 (0001) substrates prepared with different buffer layers

2012 ◽  
Vol 258 (12) ◽  
pp. 5073-5079 ◽  
Author(s):  
Seung Wook Shin ◽  
G.L. Agawane ◽  
In Young Kim ◽  
Ye Bin Kwon ◽  
In Ok Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Doped Zno

Strain-Controlled High Mobility in Modulation Doped Si0.5Ge0.5/Ge/Si1-xGex Hetero-Structures

1989 ◽  
Vol 160 ◽  
Author(s):  
Masanobu Miyao ◽  
Eiichi Murakami ◽  
Hiroyuki Etoh ◽  
Kiyokazu Nakagawa
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Valence Band ◽  
Strain Field ◽  
High Mobility ◽  
Buffer Layers ◽  
Two Dimensional ◽  
Mbe Growth ◽  
Hetero Structure

AbstractFormation and characterization of a new hetero -structure of modulation doped p-Si0.5Ge0.5/Ge/Si1-xGex are comprehensively studied. In the MBE growth, thick Si1-xGex buffer layers are grown incommensurately at high temperature (520°C), and thin Si0.5Ge0.5/Ge layers are grown commensurately at low temperature (≦450°C). The strain field in the Ge channel layers can be precisely controlled by changing the Si composition (1-X) in the Si 1 -xGex buffer layers. As a result, a large energy discontinuity in the valence band (0.17 eV) is realized at the hetero -interface of p-Si0.5Ge0.5/Ge. This enables a high mobility of two -dimensional hole gas (4500 cm2/Vs) at 77 K.

Characterization of Low Temperature SiNx Films for 3D/2.5D-IC TSV

2015 ◽  
Vol 135 (7) ◽  
pp. 733-738 ◽  
Author(s):  
Yasushi Kobayashi ◽  
Yoshihiro Nakata ◽  
Tomoji Nakamura ◽  
Mayumi B. Takeyama ◽  
Masaru Sato ◽  
...  
Keyword(s):  
Low Temperature
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