Effect of large work function modulation of MoS2 by controllable chlorine doping using a remote plasma

2020 ◽  
Vol 8 (5) ◽  
pp. 1846-1851 ◽  
Author(s):  
Ki Hyun Kim ◽  
Ki Seok Kim ◽  
You Jin Ji ◽  
Inyong Moon ◽  
Keun Heo ◽  
...  
Keyword(s):  
Work Function ◽  
Inductively Coupled Plasma ◽  
Remote Plasma ◽  
Inductively Coupled ◽  
Chlorine Doping ◽  
Large Work ◽  
Effect Of Doping

In this study, a simple and controllable chlorine doping method of MoS2 using a remote inductively coupled plasma (ICP) was studied and the effect of doping on the properties of MoS2 was investigated by adjusting the work function of MoS2.

scholarly journals Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment

2004 ◽  
Vol 95 (2) ◽  
pp. 586-590 ◽  
Author(s):  
Kwang Ho Lee ◽  
Ho Won Jang ◽  
Ki-Beom Kim ◽  
Yoon-Heung Tak ◽  
Jong-Lam Lee
Keyword(s):  
Plasma Treatment ◽  
Work Function ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled

Enhanced Work Function of Al-Doped Zinc-Oxide Thin Films by Oxygen Inductively Coupled Plasma Treatment

2014 ◽  
Vol 16 (1) ◽  
pp. 79-82 ◽  
Author(s):  
Zebin Li ◽  
Zhonghang Wu ◽  
Jiaqi Ju ◽  
Kongduo He ◽  
Zhenliu Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Work Function ◽  
Inductively Coupled Plasma ◽  
Oxide Thin Films ◽  
Inductively Coupled

scholarly journals Selective Etching of Silicon Nitride Over Silicon Oxide using ClF3/H2 Remote Plasma

2021 ◽  
Author(s):  
Won Oh Lee ◽  
Ki Hyun Kim ◽  
Doo San Kim ◽  
You Jin Ji ◽  
Ji Eun Kang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Remote Plasma ◽  
Inductively Coupled ◽  
Isotropic Etching ◽  
A Current

Abstract Precise and selective removal of silicon nitride in a SiNx/SiOy stack is crucial for a current 3D-NAND (not and) fabrication process. In this study, fast and ultra-high selective isotropic etching of SiNx have been studied using a ClF3/H2 remote plasma in an inductively coupled plasma system and a mechanism of SiNx etching was investigated by focusing on the role of Cl, F, and H radicals in the plasma. The SiNx etch rate over 800 Å/min with the etch selectivity of ~130 could be observed under a ClF3 remote plasma at a room temperature. Furthermore, compromising the etch rate of SiNx by adding H2 to the ClF3 plasma, the etch selectivity of SiNx over SiOy close to ~ 200 could be obtained. The etch characteristics of SiNx and SiOy with increasing the process temperature demonstrated the higher activation energy of SiOy compared to that of SiNx with ClF3 plasma.

scholarly journals Negative Hydrogen and Deuterium Ion Density in a Low Pressure Plasma in Front of a Converter Surface at Different Work Functions

Plasma ◽  
2021 ◽  
Vol 4 (1) ◽  
pp. 94-107
Author(s):  
Sofia Cristofaro ◽  
Roland Friedl ◽  
Ursel Fantz
Keyword(s):  
Work Function ◽  
Inductively Coupled Plasma ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Balance Model ◽  
Ion Density ◽  
Inductively Coupled ◽  
Work Functions ◽  
Surface Conversion

Negative ion sources of neutral beam injection (NBI) systems for future fusion devices like ITER (“The Way” in Latin) rely on the surface conversion of hydrogen (or deuterium) atoms and positive ions to negative ions in an inductively coupled plasma (ICP). The efficiency of this process depends on the work function of the converter surface. By introducing caesium into the ion source the work function decreases, enhancing the negative ion yield. In order to study the isotope effect on the negative ion density at different work functions, fundamental investigations are performed in a planar ICP laboratory experiment where the work function and the negative ion density in front of a sample can be simultaneously and absolutely determined. For work functions above 2.7 eV, the main contribution to the negative hydrogen ion density is solely due to volume formation, which can be modeled via the rate balance model YACORA H−, while below 2.7 eV the surface conversion become significant and the negative ion density increases. For a work function of 2.1 eV (bulk Cs), the H− density increases by at least a factor of 2.8 with respect to a non-caesiated surface. With a deuterium plasma, the D− density measured at 2.1 eV is a factor of 2.5 higher with respect to a non-caesiated surface, reaching densities of surface produced negative ions comparable to the hydrogen case.

On a dual inductively coupled plasma for direct and remote plasma in a reactor

2004 ◽  
Vol 11 (10) ◽  
pp. 4830-4836 ◽  
Author(s):  
Saehoon Uhm ◽  
Kyong-Ho Lee ◽  
Hong Young Chang ◽  
Chin Wook Chung
Keyword(s):  
Inductively Coupled Plasma ◽  
Remote Plasma ◽  
Inductively Coupled

scholarly journals The enhancement of Hall mobility and conductivity of CVD graphene through radical doping and vacuum annealing

RSC Advances ◽  
2017 ◽  
Vol 7 (26) ◽  
pp. 16104-16108 ◽  
Author(s):  
Viet Phuong Pham ◽  
Anurag Mishra ◽  
Geun Young Yeom
Keyword(s):  
Hall Mobility ◽  
Inductively Coupled Plasma ◽  
Vacuum Annealing ◽  
Plasma System ◽  
Cvd Graphene ◽  
Inductively Coupled ◽  
Chlorine Doping ◽  
System P

We report an innovated method for chlorine doping of graphene utilizing an inductively coupled plasma system.

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