On a dual inductively coupled plasma for direct and remote plasma in a reactor

2004 ◽  
Vol 11 (10) ◽  
pp. 4830-4836 ◽  
Author(s):  
Saehoon Uhm ◽  
Kyong-Ho Lee ◽  
Hong Young Chang ◽  
Chin Wook Chung
Keyword(s):  
Inductively Coupled Plasma ◽  
Remote Plasma ◽  
Inductively Coupled

scholarly journals Selective Etching of Silicon Nitride Over Silicon Oxide using ClF3/H2 Remote Plasma

2021 ◽  
Author(s):  
Won Oh Lee ◽  
Ki Hyun Kim ◽  
Doo San Kim ◽  
You Jin Ji ◽  
Ji Eun Kang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Remote Plasma ◽  
Inductively Coupled ◽  
Isotropic Etching ◽  
A Current

Abstract Precise and selective removal of silicon nitride in a SiNx/SiOy stack is crucial for a current 3D-NAND (not and) fabrication process. In this study, fast and ultra-high selective isotropic etching of SiNx have been studied using a ClF3/H2 remote plasma in an inductively coupled plasma system and a mechanism of SiNx etching was investigated by focusing on the role of Cl, F, and H radicals in the plasma. The SiNx etch rate over 800 Å/min with the etch selectivity of ~130 could be observed under a ClF3 remote plasma at a room temperature. Furthermore, compromising the etch rate of SiNx by adding H2 to the ClF3 plasma, the etch selectivity of SiNx over SiOy close to ~ 200 could be obtained. The etch characteristics of SiNx and SiOy with increasing the process temperature demonstrated the higher activation energy of SiOy compared to that of SiNx with ClF3 plasma.

Effect of large work function modulation of MoS2 by controllable chlorine doping using a remote plasma

2020 ◽  
Vol 8 (5) ◽  
pp. 1846-1851 ◽  
Author(s):  
Ki Hyun Kim ◽  
Ki Seok Kim ◽  
You Jin Ji ◽  
Inyong Moon ◽  
Keun Heo ◽  
...  
Keyword(s):  
Work Function ◽  
Inductively Coupled Plasma ◽  
Remote Plasma ◽  
Inductively Coupled ◽  
Chlorine Doping ◽  
Large Work ◽  
Effect Of Doping

In this study, a simple and controllable chlorine doping method of MoS2 using a remote inductively coupled plasma (ICP) was studied and the effect of doping on the properties of MoS2 was investigated by adjusting the work function of MoS2.

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