Preparing non-volatile resistive switching memories by tuning the content of Au@air@TiO2-h yolk–shell microspheres in a poly(3-hexylthiophene) layer

Nanoscale ◽  
2015 ◽  
Vol 7 (46) ◽  
pp. 19579-19585 ◽  
Author(s):  
Peng Wang ◽  
Quan Liu ◽  
Chun-Yu Zhang ◽  
Jun Jiang ◽  
Li-Hua Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Memory Devices ◽  
Inorganic Hybrid ◽  
Variable Memory

Organic/inorganic hybrid (Au@air@TiO2-h/P3HT) memory devices showed variable memory performance when tuning the microspheres content.

New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Mikhail Dronov ◽  
Ivan Belogorohov ◽  
Dmitry Khokhlov
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Resistive Switching ◽  
Memory Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Electrical Behavior ◽  
Aluminum Phthalocyanine ◽  
Behavior Based ◽  
Polymer Memory

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.

scholarly journals Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6477-6503 ◽  
Author(s):  
Manoj Kumar ◽  
Sanju Rani ◽  
Yogesh Singh ◽  
Kuldeep Singh Gour ◽  
Vidya Nand Singh
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Resistive Switching ◽  
Gas Sensors ◽  
Material Properties ◽  
Topological Insulators ◽  
Memory Devices ◽  
Tin Selenide ◽  
Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

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