New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Mikhail Dronov ◽  
Ivan Belogorohov ◽  
Dmitry Khokhlov
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Resistive Switching ◽  
Memory Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Electrical Behavior ◽  
Aluminum Phthalocyanine ◽  
Behavior Based ◽  
Polymer Memory

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.

Photo-controllable Resistive Memory Based on Polymer Materials

2015 ◽  
Vol 1729 ◽  
pp. 119-124
Author(s):  
Mikhail Dronov ◽  
Maria Kotova ◽  
Ivan Belogorohov
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Polymer Materials ◽  
Charge Storage ◽  
Resistive Memory ◽  
Electrical Behavior ◽  
Filament Formation ◽  
Behavior Based

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on polymer materials. We demonstrate that adding photosensitive particles to admixture allows us to control switching voltages and to observe photo-induced switching in addition to electrical one. From the properties of electrically-induced resistive switching and from the presence of light-induced switching we propose the necessity to consider crossover between to different switching mechanisms – filament formation and charge storage.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

scholarly journals Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7535
Author(s):  
Ghulam Dastgeer ◽  
Amir Muhammad Afzal ◽  
Jamal Aziz ◽  
Sajjad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Resistance State ◽  
Building Blocks ◽  
Memory Device ◽  
Memory Storage ◽  
Memory Devices ◽  
Two Dimensional ◽  
Ag Filament ◽  
Resistance State

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

Human hair keratin for physically transient resistive switching memory devices

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Human Hair ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Performance ◽  
Hair Keratin ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

Gold Nanoparticle Based Electrically Rewritable Polymer Memory Devices

2008 ◽  
Vol 54 ◽  
pp. 480-485 ◽  
Author(s):  
Dominic Prime ◽  
Shashi Paul
Keyword(s):  
Low Cost ◽  
Memory Performance ◽  
Electronic Devices ◽  
Memory Devices ◽  
Future Technology ◽  
Active Layers ◽  
Device Structures ◽  
The Subject ◽  
Processing Steps ◽  
Polymer Memory

Organic and polymer based electronic devices are currently the subject of a great deal of scientific investigation and development. This interest can be attributed to the low cost, easy processing steps and simple device structures of organic electronics when compared to conventional silicon and inorganic electronics. In the field of organic electronic memories, non-volatile, rewritable polymer memory devices (PMDs) have shown promise as a future technology where cost and compatibility with flexible substrates are important factors. In this paper PMDs based on active layers containing an admixture of polystyrene, gold nanoparticles and 8-hydroxyquinoline will be presented, showing the devices’ electrical characteristics and memory performance attributes, and where possible discussing possible mechanisms of operation.

Preparing non-volatile resistive switching memories by tuning the content of Au@air@TiO2-h yolk–shell microspheres in a poly(3-hexylthiophene) layer

Nanoscale ◽  
2015 ◽  
Vol 7 (46) ◽  
pp. 19579-19585 ◽  
Author(s):  
Peng Wang ◽  
Quan Liu ◽  
Chun-Yu Zhang ◽  
Jun Jiang ◽  
Li-Hua Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Memory Devices ◽  
Inorganic Hybrid ◽  
Variable Memory

Organic/inorganic hybrid (Au@air@TiO2-h/P3HT) memory devices showed variable memory performance when tuning the microspheres content.

Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture

2014 ◽  
Vol 95 ◽  
pp. 107-112
Author(s):  
Z.H. Alhalafi ◽  
Shashi Paul
Keyword(s):  
Electrical Conductivity ◽  
Metal Oxides ◽  
Memory Device ◽  
Memory Devices ◽  
Back Contact ◽  
Metal Insulator ◽  
Non Volatile Memory ◽  
Display Memory ◽  
Mis Devices ◽  
Polymer Memory

In this paper, a non-volatile memory device based on a blend of metal oxides (Known as NiO) and polymer has been investigated. These devices have shown to display memory effects; a marked difference in electrical conductivity between the ‘on’ and ‘off’ states. However, the exact mechanism under-pinning these two conductivities states are not very clear. The structures used in investigation are metal-admixture-metal (MAM) and metal-insulator-semiconductor (MIS) devices. Also, glass and p-types silicon (100 orientations) with a pre-prepared Ohmic back contact were used for the MAM and MIS substrates respectively. This work will address some of the questions in regard to the electrical bistability shown by polymer memory devices.

scholarly journals A sustainable resistive switching memory device based on organic keratin extracted from hair

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12436-12440 ◽  
Author(s):  
Bolin Guo ◽  
Bai Sun ◽  
Wentao Hou ◽  
Yuanzheng Chen ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

This study suggests that keratin is a potential biomaterial for the preparation of memory devices with non-toxicity, degradability and sustainability.

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