Graphene van der Waals heterostructures for high-performance photodetectors

2019 ◽  
Vol 7 (36) ◽  
pp. 11056-11067 ◽  
Author(s):  
Huijuan Geng ◽  
Di Yuan ◽  
Zhi Yang ◽  
Zhenjie Tang ◽  
Xiwei Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Recent Progress ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Comprehensive Review ◽  
Vdw Heterostructure

We present a comprehensive review on the recent progress of graphene vdW heterostructure photodetectors and give further perspectives in this emerging field.

Layer-dependent photocatalysts of GaN/SiC-based multilayer van der Waals heterojunctions for Hydrogen Evolution

2021 ◽  
Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Hydrogen Evolution ◽  
High Performance ◽  
Van Der Waals ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Van Der Waals Heterostructures ◽  
Composite Photocatalysts

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...

Determination of optimum optoelectronic properties in vertically stacked MoS2/h-BN/WSe2 van der Waals heterostructures

2019 ◽  
Vol 21 (41) ◽  
pp. 23179-23186 ◽  
Author(s):  
Shilin Tan ◽  
Yipeng Zhao ◽  
Jiansheng Dong ◽  
Guowei Yang ◽  
Gang Ouyang
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Van Der Waals ◽  
Optoelectronic Properties ◽  
Photoelectric Conversion Efficiency ◽  
Optimal Thickness ◽  
Photoelectric Conversion ◽  
Van Der Waals Heterostructures ◽  
Vdw Heterostructure

Inserting an insulator at the interface in vdW heterostructure solar cell unit can improve the photoelectric conversion efficiency, and the insulator has an optimal thickness.

scholarly journals Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe2N4 van der Waals Heterostructures

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3338
Author(s):  
Jiali Wang ◽  
Xiuwen Zhao ◽  
Guichao Hu ◽  
Junfeng Ren ◽  
Xiaobo Yuan
Keyword(s):  
Optical Properties ◽  
Absorption Coefficient ◽  
High Performance ◽  
Density Functional ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Electronic And Optical Properties ◽  
Wide Range ◽  
Direct Band

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.

scholarly journals Strongly coupled van der Waals heterostructures for high-performance infrared phototransistor

2019 ◽  
Vol 114 (10) ◽  
pp. 103501 ◽  
Author(s):  
Ningning Li ◽  
Yao Wen ◽  
Ruiqing Cheng ◽  
Lei Yin ◽  
Feng Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Strongly Coupled

A high-performance short-wave infrared phototransistor based on a 2D tellurium/MoS2 van der Waals heterojunction

2021 ◽  
Vol 9 (38) ◽  
pp. 13123-13131
Author(s):  
Jinrong Yao ◽  
Fangfang Chen ◽  
Juanjuan Li ◽  
Junli Du ◽  
Di Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Response Spectrum ◽  
Van Der Waals ◽  
Short Wave ◽  
Swir Band ◽  
Vdw Heterostructure ◽  
Short Wave Infrared

A gate-tunable Te/MoS2 vdW heterostructure is fabricated, exhibiting favourable photodetection properties with a response spectrum covering the whole SWIR band.

scholarly journals Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Gang Xu ◽  
Yelu He
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
High Performance ◽  
Van Der Waals ◽  
Type I ◽  
Normal Strain ◽  
Van Der Waals Heterostructures ◽  
Electronic Band ◽  
Fundamental Research ◽  
Metal Phase Transition

In recent years, much interest in the study of Van der Waals heterostructures (vdWhs) has arisen. This has led to a significant amount of fundamental research being produced, from which novel optoelectronic applications have been established. By using first principles, we analyze the electronic structure of silicane/SnSe2 vdWhs in the response to an externally applied electric field and a normal strain. The results show that the silicane/SnSe2 vdWh acts as an indirect semiconductor when it is subjected to an applied electric field between −1 and 0.1 V/Å and becomes a metal in the 0.2 to 1 V/Å range. Significantly, the electronic band alignments of the silicane/SnSe2 vdWhs are modified from a type-II to a type-I when a field of −0.7 V/Å is applied. Furthermore, it is determined that the silicane/SnSe2 vdWhs appears to have a semiconductor-metal phase transition at a strain of −5%. Our results indicate that the silicane/SnSe2 vdWhs have the potential for applications in novel high-performance optoelectronic devices.

Printable Transfer-Free and Wafer-Size MoS2/Graphene van der Waals Heterostructures for High-Performance Photodetection

2017 ◽  
Vol 9 (14) ◽  
pp. 12728-12733 ◽  
Author(s):  
Qingfeng Liu ◽  
Brent Cook ◽  
Maogang Gong ◽  
Youpin Gong ◽  
Dan Ewing ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Wafer Size

scholarly journals High-performance near-infrared Schottky-photodetector based graphene/In2S3 van der Waals heterostructures

RSC Advances ◽  
2020 ◽  
Vol 10 (40) ◽  
pp. 23662-23667
Author(s):  
Long Chen ◽  
Zhenghan Li ◽  
Chaoyi Yan
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Near Infrared ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Carrier Separation

The photodetectors based on graphene/In2S3 van der Waals heterostructures through junction carrier separation exhibited an excellent infrared performance of high photoresponsivity of 0.49 mA W−1, external quantum efficiency of 0.07%, and detectivity of 3.05 × 107 jones using an 808 nm laser.

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