High-performance near-infrared Schottky-photodetector based graphene/In2S3 van der Waals heterostructures
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The photodetectors based on graphene/In2S3 van der Waals heterostructures through junction carrier separation exhibited an excellent infrared performance of high photoresponsivity of 0.49 mA W−1, external quantum efficiency of 0.07%, and detectivity of 3.05 × 107 jones using an 808 nm laser.
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2019 ◽
2019 ◽
Vol 123
(30)
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pp. 18585-18592
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Keyword(s):
2013 ◽
Vol 4
(15)
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pp. 2455-2460
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