A high-performance short-wave infrared phototransistor based on a 2D tellurium/MoS2 van der Waals heterojunction

2021 ◽  
Vol 9 (38) ◽  
pp. 13123-13131
Author(s):  
Jinrong Yao ◽  
Fangfang Chen ◽  
Juanjuan Li ◽  
Junli Du ◽  
Di Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Response Spectrum ◽  
Van Der Waals ◽  
Short Wave ◽  
Swir Band ◽  
Vdw Heterostructure ◽  
Short Wave Infrared

A gate-tunable Te/MoS2 vdW heterostructure is fabricated, exhibiting favourable photodetection properties with a response spectrum covering the whole SWIR band.

Flexible Short-Wave Infrared Image Sensors Enabled by High-Performance Polymeric Photodetectors

2020 ◽  
Vol 53 (23) ◽  
pp. 10636-10643
Author(s):  
Lei Lv ◽  
Wei Dang ◽  
Xiaoxi Wu ◽  
Hao Chen ◽  
Tao Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Infrared Image ◽  
Short Wave ◽  
Image Sensors ◽  
Short Wave Infrared ◽  
Infrared Image Sensors

scholarly journals Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths

2021 ◽  
Author(s):  
Fiona Thorburn ◽  
Xin Yi ◽  
Zoe Greener ◽  
Jaroslaw Kirkoda ◽  
Ross Millar ◽  
...  
Keyword(s):  
High Performance ◽  
Single Photon ◽  
Wavelength Region ◽  
Short Wave ◽  
Single Photon Detection ◽  
Single Photon Detector ◽  
Photon Detectors ◽  
Long Distance ◽  
Single Photon Detectors ◽  
Short Wave Infrared

Abstract Germanium-on-Silicon (Ge-on-Si) based single-photon avalanche diodes (SPADs) have recently emerged as a promising detector candidate for ultra-sensitive and picosecond resolution timing measurement of short-wave infrared (SWIR) photons. Many applications benefit from operating in the SWIR spectral range, such as long distance Light Detection and Ranging (LiDAR), however, there are few single-photon detectors exhibiting the high-performance levels obtained by all-silicon SPADs commonly used for single-photon detection at wavelengths < 1 μm. This paper first details the advantages of operating at SWIR wavelengths, the current technologies, and associated issues, and describes the potential of Ge-on-Si SPADs as a single-photon detector technology for this wavelength region. The working principles, fabrication and characterisation processes of such devices are subsequently detailed. We review the research in these single-photon detectors and detail the state-of-the-art performance. Finally, the challenges and future opportunities offered by Ge-on-Si SPAD detectors are discussed.

Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials

2021 ◽  
Author(s):  
Wei Yan ◽  
Brett C. Johnson ◽  
Sivacarendran Balendhran ◽  
Jasper Cadusch ◽  
Di Yan ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Short Wave ◽  
Infrared Photodetectors ◽  
Van Der Waals Materials ◽  
Short Wave Infrared

Graphene van der Waals heterostructures for high-performance photodetectors

2019 ◽  
Vol 7 (36) ◽  
pp. 11056-11067 ◽  
Author(s):  
Huijuan Geng ◽  
Di Yuan ◽  
Zhi Yang ◽  
Zhenjie Tang ◽  
Xiwei Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Recent Progress ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Comprehensive Review ◽  
Vdw Heterostructure

We present a comprehensive review on the recent progress of graphene vdW heterostructure photodetectors and give further perspectives in this emerging field.

scholarly journals Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

Nanophotonics ◽  
2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Daniel Benedikovic ◽  
Léopold Virot ◽  
Guy Aubin ◽  
Jean-Michel Hartmann ◽  
Farah Amar ◽  
...  
Keyword(s):  
Information And Communication Technologies ◽  
Silicon Germanium ◽  
High Performance ◽  
Short Wave ◽  
Research Field ◽  
Silicon Nanophotonics ◽  
Nanophotonic Devices ◽  
Direct Energy ◽  
Short Wave Infrared ◽  
Silicon And Germanium

AbstractIntegrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.

scholarly journals Cross-Spectral Face Verification in the Short Wave Infrared (SWIR) Band

2010 ◽  
Author(s):  
Thirimachos Bourlai ◽  
Nathan Kalka ◽  
Arun Ross ◽  
Bojan Cukic ◽  
Lawrence Hornak
Keyword(s):  
Short Wave ◽  
Face Verification ◽  
Swir Band ◽  
Short Wave Infrared

High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application

2019 ◽  
Vol 28 (12) ◽  
pp. 128501 ◽  
Author(s):  
Yue Zhao ◽  
Nan Wang ◽  
Kai Yu ◽  
Xiaoming Zhang ◽  
Xiuli Li ◽  
...  
Keyword(s):  
High Performance ◽  
Short Wave ◽  
Short Wave Infrared ◽  
Silicon Based

High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model

2019 ◽  
Vol 804 ◽  
pp. 18-26 ◽  
Author(s):  
Vidya P. Deviprasad ◽  
Hemant Ghadi ◽  
Debabrata Das ◽  
Debiprasad Panda ◽  
Harshal Rawool ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Short Wave ◽  
Infrared Photodetector ◽  
Simulated Model ◽  
Short Wave Infrared
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