Layer-dependent photocatalysts of GaN/SiC-based multilayer van der Waals heterojunctions for Hydrogen Evolution

2021 ◽  
Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Hydrogen Evolution ◽  
High Performance ◽  
Van Der Waals ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Van Der Waals Heterostructures ◽  
Composite Photocatalysts

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...

Two-Dimensional BDT-Based Wide Band Gap Polymer Donor for Efficient Non-Fullerene Organic Solar Cells

2017 ◽  
Vol 121 (36) ◽  
pp. 19634-19641 ◽  
Author(s):  
Kai Zhang ◽  
Yunpeng Qin ◽  
Feng Li ◽  
Liangmin Yu ◽  
Mingliang Sun
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Organic Solar Cells ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap

New Two-Dimensional Wide Band Gap Hydrocarbon Insulator by Hydrogenation of a Biphenylene Sheet

2021 ◽  
pp. 8889-8896
Author(s):  
Yujie Liao ◽  
XiZhi Shi ◽  
Tao Ouyang ◽  
Jin Li ◽  
Chunxiao Zhang ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap

Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials：properties, fabrication and applications

2021 ◽  
Author(s):  
Zhongxin Wang ◽  
Guodong Wang ◽  
Xintong Liu ◽  
Shouzhi Wang ◽  
Tailin Wang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Band Gap ◽  
Hot Spot ◽  
Wide Band ◽  
Aluminium Nitride ◽  
Semiconductor Materials ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Nitride Semiconductor ◽  
New Generation

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...

scholarly journals Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide

2D Materials ◽  
2021 ◽  
Author(s):  
Geoffroy Kremer ◽  
Juan Camilo Alvarez Quiceno ◽  
Thomas Pierron ◽  
Cesar Gonzalez ◽  
Muriel Sicot ◽  
...  
Keyword(s):  
Band Gap ◽  
Silicon Oxide ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Flat Bands

scholarly journals Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe2N4 van der Waals Heterostructures

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3338
Author(s):  
Jiali Wang ◽  
Xiuwen Zhao ◽  
Guichao Hu ◽  
Junfeng Ren ◽  
Xiaobo Yuan
Keyword(s):  
Optical Properties ◽  
Absorption Coefficient ◽  
High Performance ◽  
Density Functional ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Electronic And Optical Properties ◽  
Wide Range ◽  
Direct Band

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.

Na4CdGe2S7: A Sodium-Rich Quaternary Wide-Band-Gap Chalcogenide with Two-Dimensional [Ge2CdS7]∞ Layers

2020 ◽  
Vol 59 (22) ◽  
pp. 16132-16136
Author(s):  
Shengzi Zhang ◽  
Fei Liang ◽  
Pifu Gong ◽  
Yi Yang ◽  
Zheshuai Lin
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap

Cd1-xMgxS CQDs Thin Films for High Performance and Highly Selective NIR Photodetection

2021 ◽  
Author(s):  
Pragati Kumar ◽  
Tania Kalsi
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
High Performance ◽  
Wide Band ◽  
Cost Effective ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Development of high-performance and highly selective NIR photodetectors (PDs) using wide band gap semiconductors is a significant field of research in the present scenario. Herein, cost effective and easy to...

Manipulating the Intermolecular Stacking of Polymeric Donors for Efficient Organic Solar Cells

2021 ◽  
Author(s):  
Yong Zhao ◽  
Yu Lu ◽  
Yonghai Li ◽  
Xiao Kang ◽  
Xichang Bao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conjugated Polymers ◽  
Band Gap ◽  
Organic Solar Cells ◽  
High Performance ◽  
Wide Band ◽  
Wide Band Gap

Most polymer donors developed so far for high-performance non-fullerene OSCs are designed in planar molecular geometries containing BDT units. In this work, two D−A conjugated polymers with wide band gap,...

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