The impurity photovoltaic (IPV) effect in wide-bandgap semiconductors: an opportunity for very-high-efficiency solar cells?

2002 ◽  
Vol 10 (5) ◽  
pp. 345-353 ◽  
Author(s):  
G. Beaucarne ◽  
A. S. Brown ◽  
M. J. Keevers ◽  
R. Corkish ◽  
M. A. Green
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
High Efficiency Solar Cells ◽  
Bandgap Semiconductors ◽  
Very High

Combined Ozone/HF/HCI Based Cleaning and Adjusted Emitter Etch-Back for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 305-309 ◽  
Author(s):  
Anamaria Moldovan ◽  
Katrin Birmann ◽  
Jochen Rentsch ◽  
Martin Zimmer ◽  
Thomas Gitte ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Oxidation Potential ◽  
Silicon Etching ◽  
Waste Generation ◽  
Production Lines ◽  
High Efficiency Solar Cells ◽  
High Oxidation ◽  
Cleaning Procedures ◽  
Very High

RCA cleaning in multiple variations is widely used in photovoltaic production lines for high efficiency solar cells. These commonly peroxide based cleaning procedures are effective, but suffering from large chemical consumption and waste generation. A substitution of hydrogen peroxide by ozone in cleaning solutions is not realized yet for PV devices despite its high oxidation potential and facility advantages. The very high potential of ozone cleaning has been shown in various microelectronic applications [1-7]. Dissolved ozone in HF/HCl solution gives the option of cleaning by combined silicon etching and oxidizing as well as complexing metal contaminations due to F- and Cl-.

Very high efficiency solar cells

2006 ◽  
Author(s):  
Allen Barnett ◽  
Douglas Kirkpatrick ◽  
Christiana Honsberg
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
High Efficiency Solar Cells ◽  
Very High

Material Control for High-Efficiency Amorphous Silicon Solar Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
Yoshihiro Hishikawa ◽  
Manabu Sasaki ◽  
Sadaji Tsuge ◽  
Shingo Okamoto ◽  
Shinya Tsuda
Keyword(s):  
Solar Cells ◽  
Deposition Rate ◽  
High Efficiency ◽  
Defect Density ◽  
Wide Bandgap ◽  
Film Deposition ◽  
Material Control ◽  
High Efficiency Solar Cells ◽  
Film Deposition Rate ◽  
Conventional Device

A total-area conversion efficiency of 12.0% (100cm2) has been achieved for a single-junction a-Si solar cell. The film deposition rate (Rd) plays an essential role in controlling the optical and electrical properties of "device-quality" a-Si:H for high-efficiency solar cells. The properties of conventional "device-quality" a-Si:H films deposited from 100% SiH4 are primarily determined by the balance between Ts and Rd. A lower or higher deposition rate results in a-Si:H with a narrower or wider bandgap, respectively. This enables the properties of a-Si:H to be controlled independent of Ts. The controllable range of a-Si:H properties can be widened by effectively utilizing factors such as ion bombardment. For example, a high dilution of SiH4 with H2 ( H2 SiH4 = 10 or more) or an H2 plasma treatment after deposition results in a-Si:H with a very wide bandgap and low defect density, which cannot be achieved by using 100% SiH4- Controlling the properties of a-Si:H by applying vibrational / rotational energy is also investigated.

Enhanced up-converted fluorescence in fluorozirconate based glass ceramics for high efficiency solar cells

2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Glass Ceramics ◽  
High Efficiency Solar Cells
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