scholarly journals Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

2004 ◽  
Author(s):  
B. Ozpineci
Keyword(s):  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors

On the Progress Made in GaN Vertical Device Technology

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940010
Author(s):  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Wide Range ◽  
Higher Power ◽  
Key Driver ◽  
Bandgap Semiconductors ◽  
Device Technology ◽  
Made In

Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms the theme of this article. CAVETs and OGFETs (a type of MOSFET) in GaN are picked to sketch the key achievements made in GaN vertical device over the last decade.

scholarly journals Power electronics based on wide-bandgap semiconductors: opportunities and challenges

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Giuseppe Iannaccone ◽  
Christian Sbrana ◽  
Iacopo Morelli ◽  
Sebastiano Strangio
Keyword(s):  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors

scholarly journals Wide-Bandgap Semiconductors: Nanostructures, Defects, and Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-2
Author(s):  
Meiyong Liao ◽  
Thomas Stergiopoulos ◽  
Jose Alvarez ◽  
Surojit Chattopadhyay ◽  
Guihua Zhang
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Bandgap Semiconductors
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